LTC2145CUP-12 vs LTC2216IUP Сравнение
Подробное сравнение бок о бок LTC2145CUP-12 от Analog Devices и LTC2216IUP от Analog Devices. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Analog Devices
LTC2145CUP-12 - 12-Bit 125Msps Dual ADC, 1.8V, 64-QFN | Analog Devices
LTC2145CUP-12 ✓ АктивенСравнение характеристик
| Параметр | LTC2145CUP-12 | LTC2216IUP |
|---|---|---|
| Бренд | Analog Devices | Analog Devices |
| Категория | ADC/DAC | ADC/DAC |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $26,40 | $37,80 |
| Разрешение | 12 bits | 16 bits |
| Sample Rate | 125 Msps | — |
| Number of Channels | 2 (simultaneous sampling) | 1 |
| Architecture | Pipelined with on-chip S/H | Pipelined |
| Analog Supply Voltage | 1.8 V (single supply) | — |
| Digital I/O Supply | 1.2 V to 1.8 V (separate supply) | — |
| Analog Input Type | Differential | — |
| INL (typical) | ±0.3 LSB | — |
| DNL (typical) | ±0.1 LSB (no missing codes over temperature) | — |
| Transition Noise | 0.3 LSB RMS | — |
| SNR | 70.6 dB | — |
| SFDR | 89 dB | — |
| Aperture Jitter | 0.08 ps RMS | 85 fsRMS |
| Output Modes | Full-rate CMOS, DDR CMOS, DDR LVDS (selectable) | — |
| Диапазон рабочих температур | 0 °C to +70 °C (C grade) | -40°C to +85°C (industrial, I suffix) |
| Корпус | 64-QFN EP (9 mm x 9 mm, exposed pad) | 64-pin QFN (UP) 9x9 mm with EP |
| Тип монтажа | Surface Mount | Surface Mount |
| Статус RoHS | Compliant (#PBF suffix indicates lead-free RoHS) | Compliant (#PBF suffix) |
| Sampling Rate (max) | — | 80 Msps |
| Input Range | — | 2.75 Vp-p differential (fixed) |
| Input Frequency (max, specified) | — | 400 MHz |
| SNR at 30 MHz input | — | 81 dB |
| SFDR at 30 MHz input | — | 96 dB |
| INL (max) | — | ±3.5 LSB |
| DNL (max) | — | ±1 LSB (no missing codes) |
| Analog Supply (AVDD) | — | 3.3 V |
| Digital Supply (OVDD) | — | 1.8 V |
| Power Consumption (80 Msps) | — | 760 mW (typical) |
| Output Interface | — | CMOS or LVDS-compatible DDR |
| Internal Dither | — | Optional (improved SFDR) |