M25P16-VMN3TPB vs AT45DB041D-SU Vergleich
Detaillierter Direktvergleich von M25P16-VMN3TPB von Micron Technology und AT45DB041D-SU von Renesas Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Renesas Electronics
AT45DB041D-SU - 4Mbit SPI DataFlash 66MHz 8-SOIC | Renesas
AT45DB041D-SU ✓ AktivSpezifikationsvergleich
| Parameter | M25P16-VMN3TPB | AT45DB041D-SU |
|---|---|---|
| Marke | Micron Technology | Renesas Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,63 | $0,92 |
| Speichertyp | NOR Flash (Serial SPI) | DataFLASH NOR |
| Speichergröße | 16 Mbit (2 M x 8) | — |
| Speicherorganisation | 2 Mbyte x 8 | 2,048 pages x 264 bytes (binary) or 256 bytes (standard) |
| Schnittstelle | SPI Serial | SPI, RapidS (SPI modes 0 and 3) |
| Maximale Taktfrequenz | 75 MHz | 66 MHz |
| Versorgungsspannung | 2.7 V to 3.6 V (single supply) | 2.7 V to 3.6 V |
| Access Time | 15 ns | — |
| Page Program Time | 0.64 ms typ (256-byte page) | [DATA_NEEDED: page program time] |
| Sector Erase Time | 0.6 s typ (512 Kbit sector) | — |
| Bulk Erase Time | 13 s typ (16 Mbit) | — |
| Sector Count | 32 sectors of 64 Kbyte | — |
| Write Protection | Advanced write-protection mechanisms | — |
| Betriebstemperatur | -40C to +85C | [DATA_NEEDED: operating temperature range] |
| Gehäuse | 8-SOIC (3.90 mm width, 150 mil) | 8-pin SOIC (150 mil, EIAJ) |
| Montageart | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TPB suffix) | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| Memory Format | — | FLASH |
| Density | — | 4 Mbit (4,325,376 bits) |
| SRAM Data Buffers | — | 2 x 264 bytes |
| Endurance | — | 100,000 program/erase cycles per page |
| Data Retention | — | 20 years minimum |
| Security Register | — | 128 bytes |
| Lead-Free | — | Yes |