M29W160EB70N3E vs M29W160FB70N3E Vergleich
Detaillierter Direktvergleich von M29W160EB70N3E von Micron Technology und M29W160FB70N3E von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W160EB70N3E | M29W160FB70N3E |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,76 | $3,58 |
| Speichertyp | FLASH - NOR | FLASH - NOR |
| Speichergröße | 16 Mbit (2M x8, 1M x16) | 16 Mbit (2M x8 / 1M x16) |
| Speicherorganisation | 2M x8 / 1M x16 | — |
| Access Time | 70 ns | 70 ns |
| Schnittstelle | Parallel | Parallel |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 3.0 V to 3.6 V |
| Programming Time | 10 us (typical) | — |
| Cell Type | SLC NOR | — |
| Betriebstemperatur | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Gehäuse / Bauform | 48-TFSOP (0.724 in, 18.40 mm width) | 48-TFSOP (0.724 in, 18.40 mm width) |
| Montageart | Surface Mount | Surface Mount |
| Packaging | Tray | Tray |
| Speed Grade | -70 | — |
| FBGA Code | N/A (TSOP package) | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | — |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Programming Voltage | — | Single supply (no separate VPP required) |
| Bus Configuration | — | x8 / x16 selectable (BYTE# pin) |
| Architecture | — | Boot block |
| Program/Erase Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Status Output | — | Data polling / toggle bit |
| Block Protection | — | Yes (boot block protection) |