M29W160EB70N3E vs M29W160FB70N3E Comparación
Comparación detallada lado a lado de M29W160EB70N3E por Micron Technology y M29W160FB70N3E por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | M29W160EB70N3E | M29W160FB70N3E |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,76 | $3,58 |
| Tipo de memoria | FLASH - NOR | FLASH - NOR |
| Tamaño de memoria | 16 Mbit (2M x8, 1M x16) | 16 Mbit (2M x8 / 1M x16) |
| Organización de memoria | 2M x8 / 1M x16 | — |
| Access Time | 70 ns | 70 ns |
| Interfaz | Parallel | Parallel |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 3.0 V to 3.6 V |
| Programming Time | 10 us (typical) | — |
| Cell Type | SLC NOR | — |
| Temperatura de funcionamiento | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Encapsulado / Carcasa | 48-TFSOP (0.724 in, 18.40 mm width) | 48-TFSOP (0.724 in, 18.40 mm width) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Packaging | Tray | Tray |
| Speed Grade | -70 | — |
| FBGA Code | N/A (TSOP package) | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | — |
| Nivel MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Programming Voltage | — | Single supply (no separate VPP required) |
| Bus Configuration | — | x8 / x16 selectable (BYTE# pin) |
| Architecture | — | Boot block |
| Program/Erase Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Data Retention | — | [DATA_NEEDED: data retention] |
| Status Output | — | Data polling / toggle bit |
| Block Protection | — | Yes (boot block protection) |