M29W160EB80ZA3SE vs M29W160ET70N3F Vergleich
Detaillierter Direktvergleich von M29W160EB80ZA3SE von Micron Technology und M29W160ET70N3F von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W160EB80ZA3SE | M29W160ET70N3F |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,35 | $2,80 |
| Speichertyp | NOR Flash (Parallel) | Parallel NOR Flash |
| Speichergröße | 16 Mbit (2M x8 / 1M x16) | 16 Mbit (2 M x 8 / 1 M x 16) |
| Access Time | 80 ns | 70 ns |
| Schnittstelle | Parallel (Byte-wide / Word-wide) | — |
| Versorgungsspannung | 2.7 V to 3.6 V | 3 V / 3.3 V |
| Speicherorganisation | 16 Mbit Boot Block, x8/x16 selectable | — |
| Betriebstemperatur | -40C to +125C | — |
| Gehäuse | 48-TFBGA (6x8 mm, 0.8 mm ball pitch) | 48-pin TSOP |
| Montageart | Surface Mount (BGA) | Surface Mount |
| Packaging | Tape & Reel (TR) | Tape and Reel |
| Qualification | AEC-Q100 (automotive grade per datasheets.com listing) | AEC-Q100 qualified |
| Programming Supply | Single 3V supply for program, erase and read | — |
| Technology Family | M29W160EB (3rd generation M29W series) | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Erase Block Architecture | Boot block (parameter and main blocks) | — |
| Program/Erase Cycles | [DATA_NEEDED: program/erase endurance cycles] | — |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL level] | — |
| RoHS-Status | Pb-free (SE suffix) | RoHS-compliant package (F option) |
| Technology | — | CMOS |
| Boot Block Architecture | — | Top boot |
| Bus Configuration | — | x8 / x16 selectable |
| Temperature Grade | — | Automotive (AEC-Q100) |
| Programming Interface | — | Parallel command set |
| Number of Terminals | — | 48 |