M29W640GB70N3F vs M29W128GL70N3F Vergleich
Detaillierter Direktvergleich von M29W640GB70N3F von Micron Technology und M29W128GL70N3F von Micron Technology. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | M29W640GB70N3F | M29W128GL70N3F |
|---|---|---|
| Marke | Micron Technology | Micron Technology |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Obsolete | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,66 | $2,48 |
| Speichertyp | NOR Flash, Parallel | NOR Flash |
| Density | 64 Mb (8 MB) | 128 Mbit |
| Speicherorganisation | x8 / x16 | 8M x16 / 16M x8 |
| Access Time | 70 ns | 70 ns |
| Versorgungsspannung | 2.7 V to 3.6 V | [DATA_NEEDED: supply voltage range] |
| Betriebstemperatur | -40C to +125C | [DATA_NEEDED: operating temperature range] |
| Qualification | Automotive AEC-Q100 | — |
| Gehäuse | 48-TSOP I | 56-TSOP |
| Montageart | Surface Mount | Surface Mount |
| Program/Erase Interface | Parallel command set with status polling | — |
| Block Architecture | Uniform block (GB variant) | — |
| Part Status | Obsolete | — |
| RoHS-Status | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Endurance | [DATA_NEEDED: program/erase endurance cycles] | — |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Read Current | [DATA_NEEDED: active read current] | — |
| Memory Format | — | FLASH - NOR |
| Schnittstelle | — | Parallel |
| Block Organization Variant | — | GL (boot-block) |
| Speed Grade Code | — | -70 |
| Package Finish Code | — | N3F (lead-free TSOP) |
| Programming Interface | — | Command-set parallel bus, embedded state machine |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL level] |