MC9S12A128BCFU vs MC9S12DG128CPV Vergleich

Detaillierter Direktvergleich von MC9S12A128BCFU von NXP Semiconductors und MC9S12DG128CPV von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MC9S12A128BCFU MC9S12A128BCFU - HCS12 16-Bit MCU 128KB Flash 80-QFP | NXP

MC9S12A128BCFU - HCS12 16-Bit MCU 128KB Flash 80-QFP | NXP

MC9S12A128BCFU ✓ Aktiv
NXP Semiconductors
MC9S12DG128CPV MC9S12DG128CPV - 16-Bit HCS12 MCU, 128KB Flash | NXP

MC9S12DG128CPV - 16-Bit HCS12 MCU, 128KB Flash | NXP

MC9S12DG128CPV ✓ Aktiv

Spezifikationsvergleich

Parameter MC9S12A128BCFU MC9S12DG128CPV
Marke NXP Semiconductors NXP Semiconductors
Kategorie Microcontrollers Microcontrollers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $18,20 $17,85
Core HCS12 CPU (16-bit CISC) —
Maximum CPU Frequency 25 MHz —
Program Memory Size 128 KB (128K x 8) Flash —
RAM Size 4 KB —
EEPROM Size 2 KB —
Number of I/O Pins 59 91
ADC 8-channel, 10-bit —
Versorgungsspannung 5 V —
Gehäuse 80-QFP (14x14 mm) —
Montageart Surface Mount Surface Mount
Betriebstemperaturbereich -40C to +85C (industrial) —
Oscillator Type External (crystal/resonator or external clock) —
Connectivity CAN, SCI, SPI —
MSL-Level [DATA_NEEDED: MSL rating] 3 (168 hours)
RoHS-Status Compliant (per part stack listing) [DATA_NEEDED: RoHS status from manufacturer]
Peripheral Highlights 8-ch 10-bit ADC, PWM, SCI/SPI, CAN 2.0, SIM —
Core Architecture — HCS12 (16-bit CISC)
Maximum CPU Clock — 25 MHz
Program Memory (Flash) — 128 KB (128K x 8)
Data Memory (RAM) — 8 KB
EEPROM — 2 KB
Gehäuse / Bauform — 112-LQFP (20 x 20 mm)
Analog-to-Digital Converter — 8-channel, 10-bit ATD
CAN Modules — Up to 3 x MSCAN (CAN 2.0A/B)
Serial Interfaces — 2 x SCI (UART), 1 x SPI, 1 x I2C
Timer — Enhanced Capture Timer (ECT), 8 channels
Operating Voltage — 4.5 V to 5.5 V (single 5V supply)
Betriebstemperatur — -40 C to +125 C (automotive)
Debug Interface — Background Debug Mode (BDM)
Flash Endurance — 100,000 write/erase cycles (typical)

Datenblätter & Ressourcen

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