MC9S12DP512MPVE vs MC9S12DP512CPV Vergleich

Detaillierter Direktvergleich von MC9S12DP512MPVE von NXP Semiconductors und MC9S12DP512CPV von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MC9S12DP512MPVE MC9S12DP512MPVE - 16-bit 25MHz 512KB Flash MCU | NXP

MC9S12DP512MPVE - 16-bit 25MHz 512KB Flash MCU | NXP

MC9S12DP512MPVE ✓ Aktiv
NXP Semiconductors
MC9S12DP512CPV MC9S12DP512CPV - 16-Bit HCS12 MCU, 512KB Flash, 112-LQFP | NXP

MC9S12DP512CPV - 16-Bit HCS12 MCU, 512KB Flash, 112-LQFP | NXP

MC9S12DP512CPV ✓ Aktiv

Spezifikationsvergleich

Parameter MC9S12DP512MPVE MC9S12DP512CPV
Marke NXP Semiconductors NXP Semiconductors
Kategorie Microcontrollers Microcontrollers
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $9,45 $16,75
Core Processor HCS12 (CPU12), 16-bit CISC —
Core Size 16-bit —
Maximale Taktfrequenz 25 MHz —
Program Memory Size 512 KB (512K x 8) Flash —
RAM Size 12 KB 12 KB (12K x 8)
EEPROM Size 4 KB —
Number of I/O 91 general-purpose I/O —
ADC Resolution 10-bit —
Number of ADC Channels 16 (two 8-channel 10-bit ADCs) —
Serial Interfaces 2x SCI (asynchronous serial), IIC, SPI —
Timers 8-channel enhanced capture timer (IC/OC) —
PWM Channels 8-channel pulse-width modulator 8
Gehäuse 112-LQFP (20x20 mm) —
Montageart Surface Mount Surface Mount
Program Memory Type FLASH (0.25 um) —
Betriebstemperatur [DATA_NEEDED: operating temperature range] -40 C to +85 C (industrial)
Versorgungsspannung [DATA_NEEDED: supply voltage range] 5.0 V (4.5 V to 5.5 V)
Lebenszyklusstatus Active —
Core — HCS12 (16-bit)
Bus Frequency — 25 MHz
Program Memory (Flash) — 512 KB (512K x 8)
EEPROM — 4 KB
Number of I/O Lines — 91
Gehäuse / Bauform — 112-LQFP (20 x 20 mm)
ADC — 2 x 8-channel, 10-bit
Enhanced Capture Timer — 8-channel 16-bit ECT
SCI (UART) — 2
SPI — 1
I2C — 1
CAN — 1 x CAN 2.0
Oscillator — Internal PLL with external crystal
Debug Interface — BDM (Background Debug Mode)
Process Technology — 0.25 um Flash
RoHS-Status — Compliant (lead-free)

Datenblätter & Ressourcen

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