MD7IC2050NBR1 vs MW7IC2040NR1 Vergleich
Detaillierter Direktvergleich von MD7IC2050NBR1 von NXP Semiconductors und MW7IC2040NR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MD7IC2050NBR1 - 10W W-CDMA RF Power Amplifier 1880-2100MHz | NXP
MD7IC2050NBR1 ✓ AktivSpezifikationsvergleich
| Parameter | MD7IC2050NBR1 | MW7IC2040NR1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | RF Amplifiers | RF Amplifiers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $22,40 | $24,20 |
| RF Type | W-CDMA | General Purpose / Wideband Integrated Power Amplifier |
| Frequency Range | 1.88 GHz to 2.1 GHz | — |
| Operating Bandwidth (broader usability) | 1750 MHz to 2050 MHz | — |
| Versorgungsspannung | 28 V | — |
| Supply Current (quiescent) | 230 mA | — |
| Gain | 30.5 dB | — |
| Output Power (P3dB class, datasheet) | [DATA_NEEDED: P3dB output power] | — |
| Average Output Power (W-CDMA) | 10 W average | — |
| Architecture | Multi-stage RF LDMOS integrated power amplifier | — |
| Input Matching | On-chip, 50 ohm, DC blocked | — |
| Output Matching | On-chip, >5 ohm nominal | — |
| Enable / Disable | Integrated (with quiescent current temperature compensation) | — |
| ESD Protection | Integrated | — |
| Gehäuse | TO-272 WB-14 (CASE 1618-02, plastic overmold) | — |
| Maximum Junction / Package Temperature | 225 C capable plastic | — |
| RoHS Compliance | Compliant (per manufacturer datasheet) | — |
| Montageart | Surface Mount (flanged lead) | Surface Mount (PCB solderable with bottom drain ground plane) |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | -40 C to +85 C (industrial base-station operating ambient; per Freescale/NXP LDMOS module family) |
| Manufacturer | — | NXP Semiconductors (formerly Freescale / Motorola Semiconductor) |
| Technology | — | RF LDMOS (Laterally Diffused MOSFET) |
| Funktion | — | Two-stage integrated power amplifier with on-chip matching |
| Frequency Range (Application) | — | 1805 MHz to 1990 MHz (covers 1805-1880 MHz DCS/PCS and 1930-1990 MHz UMTS) |
| Frequency Range (Characterization) | — | 100 MHz to 1 GHz |
| Supply Voltage (Vdd) | — | 24 V to 32 V (nominal 28 V) |
| Maximum Supply Voltage | — | 32 V |
| Quiescent Supply Current (Idq) | — | 75 mA |
| Small-Signal Gain | — | 23.5 dB |
| Output Power (avg, W-CDMA) | — | 4 W (typical at rated operating conditions) |
| Modulation Compatibility | — | Single W-CDMA, GSM/EDGE, UMTS, LTE, all typical cellular BTS formats |
| Gehäuse / Bauform | — | TO-270 WBL-16 (TO-270-16 Variant, Flat Leads), plastic over-mold surface-mount |
| Pin-Anzahl | — | 16 |
| Operating Mode | — | Class-AB (multi-stage, externally biased) |
| Lead Configuration | — | Flat leads (surface-mount) |
| Packaging Type | — | Tape & Reel (per part suffix NR1 suffix convention) |
| RoHS-Status | — | Compliant (per NXP product family) |