MHT1008NT1515 vs MHT1008NT1 Vergleich
Detaillierter Direktvergleich von MHT1008NT1515 von NXP Semiconductors und MHT1008NT1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MHT1008NT1515 | MHT1008NT1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,94 | $9,55 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Part Number | MHT1008NT1515 | MHT1008NT1 |
| Device Type | RF Power LDMOS Transistor, N-Channel Enhancement-Mode | — |
| Operating Frequency | 2450 MHz (ISM band) | 2400 MHz to 2500 MHz (2450 MHz typ) |
| Output Power (CW) | 12.5 W | 12.5 W |
| Drain-Source Voltage V(BR)DSS | 65 V (minimum) | — |
| Gate Threshold Voltage VGS(th) | 1.6 V | — |
| Typical Gain | 20.9 dB at 2.45 GHz | — |
| Drain Bias (typical) | 28 V | — |
| Total Power Dissipation | 48.1 W | — |
| Betriebs-Sperrschichttemperatur | -40 °C to +150 °C | — |
| Gehäuse | PLD-1.5W (PLD-1) ceramic flange | — |
| Montageart | Surface Mount / Flange Mount with heat spreader | Chassis / flange mount with bolt-down heatsink |
| RoHS-Status | Compliant | [DATA_NEEDED: rohs_status] |
| Technology | LDMOS (Laterally Diffused MOSFET) | — |
| Transistortyp | — | LDMOS, N-Channel Enhancement-Mode |
| Application | — | RF Power Transistor, ISM Band |
| Test Frequency | — | 2450 MHz |
| Drain Supply Voltage (Vdd) | — | 28 V (typical) |
| Power Gain (typical) | — | 18.6 dB at 2450 MHz |
| Drain Current | — | 110 mA |
| Power Gain (DigiKey reported) | — | 20.9 dB (max value reported by distributor) |
| Gehäuse / Bauform | — | PLD-1.5W (SOT1811), ceramic flanged |
| Lead-Free | — | [DATA_NEEDED: lead_free] |
| MSL (Moisture Sensitivity Level) | — | [DATA_NEEDED: msl_level] |