MP3H6115A6U vs MP3H6115A6T1 Vergleich

Detaillierter Direktvergleich von MP3H6115A6U von NXP Semiconductors und MP3H6115A6T1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MP3H6115A6U MP3H6115A6U - 15-115 kPa Absolute Pressure Sensor | NXP

MP3H6115A6U - 15-115 kPa Absolute Pressure Sensor | NXP

MP3H6115A6U ✓ Aktiv
NXP Semiconductors
MP3H6115A6T1 MP3H6115A6T1 - 15-115 kPa Absolute Pressure Sensor | NXP

MP3H6115A6T1 - 15-115 kPa Absolute Pressure Sensor | NXP

MP3H6115A6T1 ✓ Aktiv

Spezifikationsvergleich

Parameter MP3H6115A6U MP3H6115A6T1
Marke NXP Semiconductors NXP Semiconductors
Kategorie Pressure Sensors Pressure Sensors
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $4,85 $4,10
Sensortyp Absolute pressure sensor —
Pressure Range 15 kPa to 115 kPa (2.18 PSI to 16.68 PSI) —
Versorgungsspannung 3 V 3.0 V typical
Ausgangstyp Analog, ratiometric Analog voltage, ratiometric
Ausgangsspannungsbereich 0.12 V to 2.8 V 0.12 V to 2.8 V (at Vdd = 3.0 V)
Operating Pressure 15 kPa ~ 115 kPa —
Pressure Port Male - 0.13 inch (3.3 mm) tube Male - 0.13 inch (3.3 mm) tube
Accuracy High accuracy at high temperature (per datasheet) —
Temperature Compensation -40 C to +125 C —
Technology Piezoresistive (MEMS) with bipolar signal conditioning —
Gehäuse 8-SOIC (SOP-8), 0.295 inch / 7.50 mm body width 8-SOIC (0.295 inch, 7.50 mm width)
Montageart Surface Mount Surface Mount
Signal Conditioning On-chip bipolar op-amp and thin-film resistor network —
Output Ratiometric Yes (output proportional to VDD) —
Betriebstemperatur -40 C to +125 C —
Package Material Durable thermoplastic (PPS) surface-mount package —
RoHS-Status Compliant [DATA_NEEDED: RoHS status]
Pressure Type — Absolute
Operating Pressure Range — 15 kPa to 115 kPa (2.18 PSI to 16.68 PSI)
Versorgungsstrom — [DATA_NEEDED: supply current typical mA]
Betriebstemperaturbereich — -40 C to +125 C
Compensated Temperature Range — -40 C to +125 C
Sensor Technology — MEMS piezo-resistive with on-chip bipolar op-amp
On-Chip Signal Conditioning — Yes (amplifier + temperature compensation + thin-film resistor network)
Output Type Detail — Ratiometric to Vdd

Datenblätter & Ressourcen

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