MP3H6115A6U vs MP3H6115A6T1 Comparación
Comparación detallada lado a lado de MP3H6115A6U por NXP Semiconductors y MP3H6115A6T1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MP3H6115A6U | MP3H6115A6T1 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $4,85 | $4,10 |
| Tipo de sensor | Absolute pressure sensor | — |
| Pressure Range | 15 kPa to 115 kPa (2.18 PSI to 16.68 PSI) | — |
| Tensión de alimentación | 3 V | 3.0 V typical |
| Tipo de salida | Analog, ratiometric | Analog voltage, ratiometric |
| Rango de tensión de salida | 0.12 V to 2.8 V | 0.12 V to 2.8 V (at Vdd = 3.0 V) |
| Operating Pressure | 15 kPa ~ 115 kPa | — |
| Pressure Port | Male - 0.13 inch (3.3 mm) tube | Male - 0.13 inch (3.3 mm) tube |
| Accuracy | High accuracy at high temperature (per datasheet) | — |
| Temperature Compensation | -40 C to +125 C | — |
| Technology | Piezoresistive (MEMS) with bipolar signal conditioning | — |
| Encapsulado | 8-SOIC (SOP-8), 0.295 inch / 7.50 mm body width | 8-SOIC (0.295 inch, 7.50 mm width) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Signal Conditioning | On-chip bipolar op-amp and thin-film resistor network | — |
| Output Ratiometric | Yes (output proportional to VDD) | — |
| Temperatura de funcionamiento | -40 C to +125 C | — |
| Package Material | Durable thermoplastic (PPS) surface-mount package | — |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Pressure Type | — | Absolute |
| Operating Pressure Range | — | 15 kPa to 115 kPa (2.18 PSI to 16.68 PSI) |
| Corriente de alimentación | — | [DATA_NEEDED: supply current typical mA] |
| Rango de temperatura de funcionamiento | — | -40 C to +125 C |
| Compensated Temperature Range | — | -40 C to +125 C |
| Sensor Technology | — | MEMS piezo-resistive with on-chip bipolar op-amp |
| On-Chip Signal Conditioning | — | Yes (amplifier + temperature compensation + thin-film resistor network) |
| Output Type Detail | — | Ratiometric to Vdd |