MP3V5004GVP vs MPVZ5010G7U Vergleich
Detaillierter Direktvergleich von MP3V5004GVP von NXP Semiconductors und MPVZ5010G7U von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MP3V5004GVP - 0-3.92kPa Gauge Pressure Sensor, 3V, SOP-8 | NXP
MP3V5004GVP ✓ AktivNXP Semiconductors
MPVZ5010G7U - 10 kPa Vented Gauge Pressure Sensor, 8-DIP | NXP
MPVZ5010G7U ✓ AktivSpezifikationsvergleich
| Parameter | MP3V5004GVP | MPVZ5010G7U |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,10 | $7,25 |
| Pressure Type | Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 3.92 kPa | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Pressure Resolution | Gage, ratiometric | — |
| Versorgungsspannung | 2.7 V to 3.3 V (3 V typical) | — |
| Ausgangsspannung | 0.6 V to 3 V (ratiometric) | — |
| Ausgangstyp | Analog, ratiometric voltage | Analog, ratiometric to Vcc |
| Accuracy | 5% over 0 to 80 C | ±1.5 %FS (0 °C to 85 °C) |
| Betriebstemperatur | 0 C to +85 C | — |
| Pressure Port | Bottom port (Case 482A) | — |
| Gehäuse | SOP-8 (Small Outline Package) | 8-DIP Module (Case 1368-01, through-hole) |
| Montageart | Surface Mount | Through-Hole (DIP module with vent tube) |
| Media Compatibility | Dry air, non-corrosive gases | — |
| On-Chip Signal Conditioning | Yes (amplification + temperature compensation) | — |
| Calibration | Factory calibrated | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Supply Voltage (Vcc) | — | 4.75 V to 5.25 V (5 V typical) |
| Versorgungsstrom | — | 10 mA (maximum) |
| Analog Output Range | — | 0.2 V to 4.7 V |
| Response Time | — | [DATA_NEEDED: response time ms] |
| Betriebstemperaturbereich | — | 0 °C to +85 °C |
| Compensated Temperature Range | — | -10 °C to +60 °C |
| Storage Temperature Range | — | -30 °C to +100 °C [DATA_NEEDED: confirm exact storage spec] |
| Sensor Technology | — | Piezoresistive silicon micromachined |
| Signal Conditioning | — | On-chip, temperature compensated, calibrated |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |
| Body Height | — | 5.46 mm |