MPC8308CVMAGD vs MPC8378ECVRANGA Vergleich
Detaillierter Direktvergleich von MPC8308CVMAGD von NXP Semiconductors und MPC8378ECVRANGA von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MPC8378ECVRANGA - PowerQUICC II Pro SoC, 800MHz | NXP
MPC8378ECVRANGA ✗ AbgekündigtSpezifikationsvergleich
| Parameter | MPC8308CVMAGD | MPC8378ECVRANGA |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Microcontrollers | Microcontrollers |
| Lebenszyklusstatus | Aktiv | Ende des Lebenszyklus |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $25,90 | $65,40 |
| Core Architecture | PowerPC e300c3 | Power Architecture e300c4s |
| Number of Cores | 1 | — |
| Datenbusbreite | 32-bit | 32-Bit |
| Maximum CPU Clock | 400 MHz | — |
| Operating Temperature (TJ) | -40C to +105C | — |
| Package Type | MAPBGA-473 (19x19 mm, 0.8mm pitch) | — |
| Pin-Anzahl | 473 | — |
| Lead Free | Yes | — |
| Montageart | Surface Mount | — |
| Process Technology | 90 nm CMOS | — |
| Core Supply Voltage (Vdd) | 1.0 V (typical) | — |
| I/O Supply Voltage | 1.8 V / 2.5 V / 3.3 V | — |
| Memory Controller | 16-bit DDR2 (up to 256 MB addressable) | DDR1/DDR2 up to 400 MHz |
| Ethernet Interfaces | 1x RGMII + 1x SGMII (10/100/1000 Mbps) | — |
| USB Controller | USB 2.0 Full-Speed Host/Device | — |
| PCI Express | 1x PCIe Endpoint | 2 x PCI Express lanes |
| Security Engine | DES/3DES/AES/SHA-1/MD5/RNG | SEC 4.4 (IPsec/SSL) |
| Lifecycle Stage | ACTIVE | — |
| RoHS-Status | Compliant | Compliant (lead-free) |
| Core Frequency | — | 800 MHz |
| Supply Voltage Core | — | 1.8 V |
| Supply Voltage DDR I/O | — | 2.5 V |
| Supply Voltage I/O | — | 3.3 V |
| Ethernet | — | 4 x 10/100/1000 Mbps |
| PCI | — | 2 x PCI |
| USB | — | 2 x USB 2.0 with PHY |
| SATA | — | 2 x SATA II |
| Gehäuse | — | 689-TEBGA II (31x31 mm, 1 mm pitch) |
| Betriebstemperatur | — | -40C to +105C |
| Manufacturing Process | — | 0.09 µm CMOS |