MPQ2222 vs MPQ2222-TIN-LEAD Vergleich
Detaillierter Direktvergleich von MPQ2222 von Central Semiconductor und MPQ2222-TIN-LEAD von Central Semiconductor. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Central Semiconductor
MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222 ✓ AktivCentral Semiconductor
MPQ2222-TIN-LEAD - Quad NPN 40V 500mA BJT Array | Central Semiconductor
MPQ2222-TIN-LEAD ✓ AktivSpezifikationsvergleich
| Parameter | MPQ2222 | MPQ2222-TIN-LEAD |
|---|---|---|
| Marke | Central Semiconductor | Central Semiconductor |
| Kategorie | Transistors | Transistors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,39 | $0,54 |
| Configuration | Quad NPN Transistor Array (4 independent devices) | — |
| Transistor Polarity | NPN Silicon | — |
| Kollektor-Basis-Spannung (Vcbo) | [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet] | 60 V |
| Collector-Emitter Voltage Rating | 40 V | — |
| Emitter-Basis-Spannung (Vebo) | [DATA_NEEDED: VEBO exact value] | 5.0 V |
| Continuous Collector Current (per device) | 500 mA | — |
| Übergangsfrequenz (ft) | 200 MHz | 200 MHz |
| Power Dissipation (total package) | 650 mW | — |
| Power Dissipation (per transistor) | [DATA_NEEDED: per-transistor dissipation value] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade] | — |
| Operating and Storage Junction Temperature | [DATA_NEEDED: exact TJ range from datasheet] | — |
| Thermal Resistance (total package) | [DATA_NEEDED: thermal resistance value] | — |
| Gehäuse | 14-pin DIP (TO-116), Through Hole | TO-116, 14-pin DIP, Through Hole |
| Montageart | Through Hole | Through Hole |
| Marking | Full part number | — |
| RoHS-Status | Lead-free (PB Free suffix version available) | Non-compliant (lead-containing tin/lead plating variant) |
| Transistor Configuration | — | Quad (4 independent NPN) |
| Transistortyp | — | NPN Bipolar Junction Transistor (BJT) |
| Kollektor-Emitter-Spannung (Vceo) | — | 40 V |
| Kollektorstrom (Ic) | — | 500 mA |
| Power Dissipation | — | 650 mW |
| Plating Finish | — | Tin/Lead (order suffix TIN/LEAD) |
| Molding Compound | — | EMC GREEN, halogen-free |
| Application | — | General purpose amplifier and switching |
| Equivalent Base Type | — | Quad 2N2222-type |