MPQ2222 vs MPQ2222-TIN-LEAD Comparaison
Comparaison détaillée côte à côte de MPQ2222 par Central Semiconductor et MPQ2222-TIN-LEAD par Central Semiconductor. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Central Semiconductor
MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222 ✓ ActifCentral Semiconductor
MPQ2222-TIN-LEAD - Quad NPN 40V 500mA BJT Array | Central Semiconductor
MPQ2222-TIN-LEAD ✓ ActifComparaison des spécifications
| Paramètre | MPQ2222 | MPQ2222-TIN-LEAD |
|---|---|---|
| Marque | Central Semiconductor | Central Semiconductor |
| Catégorie | Transistors | Transistors |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,39 | $0,54 |
| Configuration | Quad NPN Transistor Array (4 independent devices) | — |
| Transistor Polarity | NPN Silicon | — |
| Tension collecteur-base (Vcbo) | [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet] | 60 V |
| Collector-Emitter Voltage Rating | 40 V | — |
| Tension émetteur-base (Vebo) | [DATA_NEEDED: VEBO exact value] | 5.0 V |
| Continuous Collector Current (per device) | 500 mA | — |
| Fréquence de transition (ft) | 200 MHz | 200 MHz |
| Power Dissipation (total package) | 650 mW | — |
| Power Dissipation (per transistor) | [DATA_NEEDED: per-transistor dissipation value] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade] | — |
| Operating and Storage Junction Temperature | [DATA_NEEDED: exact TJ range from datasheet] | — |
| Thermal Resistance (total package) | [DATA_NEEDED: thermal resistance value] | — |
| Boîtier | 14-pin DIP (TO-116), Through Hole | TO-116, 14-pin DIP, Through Hole |
| Type de montage | Through Hole | Through Hole |
| Marking | Full part number | — |
| Statut RoHS | Lead-free (PB Free suffix version available) | Non-compliant (lead-containing tin/lead plating variant) |
| Transistor Configuration | — | Quad (4 independent NPN) |
| Type de transistor | — | NPN Bipolar Junction Transistor (BJT) |
| Tension collecteur-émetteur (Vceo) | — | 40 V |
| Courant de collecteur (Ic) | — | 500 mA |
| Power Dissipation | — | 650 mW |
| Plating Finish | — | Tin/Lead (order suffix TIN/LEAD) |
| Molding Compound | — | EMC GREEN, halogen-free |
| Application | — | General purpose amplifier and switching |
| Equivalent Base Type | — | Quad 2N2222-type |