MPQ2222 vs MPQ2222A Vergleich
Detaillierter Direktvergleich von MPQ2222 von Central Semiconductor und MPQ2222A von Central Semiconductor. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Central Semiconductor
MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222 ✓ AktivCentral Semiconductor
MPQ2222A - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222A ✓ AktivSpezifikationsvergleich
| Parameter | MPQ2222 | MPQ2222A |
|---|---|---|
| Marke | Central Semiconductor | Central Semiconductor |
| Kategorie | Transistors | Transistors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,39 | $0,41 |
| Configuration | Quad NPN Transistor Array (4 independent devices) | General Purpose Amplifier / Switch |
| Transistor Polarity | NPN Silicon | — |
| Kollektor-Basis-Spannung (Vcbo) | [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet] | 75 V |
| Collector-Emitter Voltage Rating | 40 V | — |
| Emitter-Basis-Spannung (Vebo) | [DATA_NEEDED: VEBO exact value] | 6.0 V |
| Continuous Collector Current (per device) | 500 mA | — |
| Übergangsfrequenz (ft) | 200 MHz | — |
| Power Dissipation (total package) | 650 mW | 650 mW |
| Power Dissipation (per transistor) | [DATA_NEEDED: per-transistor dissipation value] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade] | [DATA_NEEDED: DC Current Gain (hFE)] |
| Operating and Storage Junction Temperature | [DATA_NEEDED: exact TJ range from datasheet] | [DATA_NEEDED: Operating and Storage Junction Temperature] |
| Thermal Resistance (total package) | [DATA_NEEDED: thermal resistance value] | [DATA_NEEDED: Thermal Resistance (total package)] |
| Gehäuse | 14-pin DIP (TO-116), Through Hole | TO-116 (14-pin DIP, through hole) |
| Montageart | Through Hole | Through Hole |
| Marking | Full part number | — |
| RoHS-Status | Lead-free (PB Free suffix version available) | — |
| Transistortyp | — | Quad NPN General Purpose BJT Array |
| Number of Transistors | — | 4 (independent) |
| Kollektor-Emitter-Spannung (Vceo) | — | 40 V |
| Continuous Collector Current | — | 500 mA |
| Transition Frequency | — | 200 MHz |
| Base Technology | — | Bipolar (BJT) |
| Polarity | — | NPN |
| Lead-Free | — | Yes (PBFREE) |