MPQ2222 vs MPQ2222A Сравнение
Подробное сравнение бок о бок MPQ2222 от Central Semiconductor и MPQ2222A от Central Semiconductor. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Central Semiconductor
MPQ2222 - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222 ✓ АктивенCentral Semiconductor
MPQ2222A - Quad NPN 40V 500mA Transistor Array | Central Semiconductor
MPQ2222A ✓ АктивенСравнение характеристик
| Параметр | MPQ2222 | MPQ2222A |
|---|---|---|
| Бренд | Central Semiconductor | Central Semiconductor |
| Категория | Transistors | Transistors |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,39 | $0,41 |
| Configuration | Quad NPN Transistor Array (4 independent devices) | General Purpose Amplifier / Switch |
| Transistor Polarity | NPN Silicon | — |
| Напряжение коллектор-база (Vcbo) | [DATA_NEEDED: VCBO exact value, typically 60 V class per 2N2222 family - verify in datasheet] | 75 V |
| Collector-Emitter Voltage Rating | 40 V | — |
| Напряжение эмиттер-база (Vebo) | [DATA_NEEDED: VEBO exact value] | 6.0 V |
| Continuous Collector Current (per device) | 500 mA | — |
| Граничная частота (ft) | 200 MHz | — |
| Power Dissipation (total package) | 650 mW | 650 mW |
| Power Dissipation (per transistor) | [DATA_NEEDED: per-transistor dissipation value] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE min/typ, higher in MPQ2222A grade] | [DATA_NEEDED: DC Current Gain (hFE)] |
| Operating and Storage Junction Temperature | [DATA_NEEDED: exact TJ range from datasheet] | [DATA_NEEDED: Operating and Storage Junction Temperature] |
| Thermal Resistance (total package) | [DATA_NEEDED: thermal resistance value] | [DATA_NEEDED: Thermal Resistance (total package)] |
| Корпус | 14-pin DIP (TO-116), Through Hole | TO-116 (14-pin DIP, through hole) |
| Тип монтажа | Through Hole | Through Hole |
| Marking | Full part number | — |
| Статус RoHS | Lead-free (PB Free suffix version available) | — |
| Тип транзистора | — | Quad NPN General Purpose BJT Array |
| Number of Transistors | — | 4 (independent) |
| Напряжение коллектор-эмиттер (Vceo) | — | 40 V |
| Continuous Collector Current | — | 500 mA |
| Transition Frequency | — | 200 MHz |
| Base Technology | — | Bipolar (BJT) |
| Polarity | — | NPN |
| Lead-Free | — | Yes (PBFREE) |