MPVZ5010G6U vs MPVZ5010G7U Vergleich
Detaillierter Direktvergleich von MPVZ5010G6U von NXP Semiconductors und MPVZ5010G7U von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MPVZ5010G7U - 10 kPa Vented Gauge Pressure Sensor, 8-DIP | NXP
MPVZ5010G7U ✓ AktivSpezifikationsvergleich
| Parameter | MPVZ5010G6U | MPVZ5010G7U |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $8,40 | $7,25 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 10 kPa (1.45 PSI) | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Ausgangstyp | Analog Voltage, Ratiometric | Analog, ratiometric to Vcc |
| Ausgangsspannungsbereich | 0.2 V to 4.7 V | — |
| Versorgungsspannung | 4.75 V to 5.25 V | — |
| Versorgungsstrom | 5 mA (typical) | 10 mA (maximum) |
| Accuracy | ±5% over 0 C to 85 C | ±1.5 %FS (0 °C to 85 °C) |
| Linearity | ±2.5% max | — |
| Betriebstemperatur | -40 C to +125 C | — |
| Gehäuse | 8-SMD Module (SOP 8) | 8-DIP Module (Case 1368-01, through-hole) |
| Port Style | No Port (rear vented) | — |
| Montageart | Surface Mount | Through-Hole (DIP module with vent tube) |
| Technology | Piezoresistive (Monolithic Silicon) | — |
| Signal Conditioning | On-chip, calibrated and temperature compensated | On-chip, temperature compensated, calibrated |
| Output Span | 4.5 V nominal (0.2 V to 4.7 V) | — |
| RoHS-Status | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Supply Voltage (Vcc) | — | 4.75 V to 5.25 V (5 V typical) |
| Analog Output Range | — | 0.2 V to 4.7 V |
| Response Time | — | [DATA_NEEDED: response time ms] |
| Betriebstemperaturbereich | — | 0 °C to +85 °C |
| Compensated Temperature Range | — | -10 °C to +60 °C |
| Storage Temperature Range | — | -30 °C to +100 °C [DATA_NEEDED: confirm exact storage spec] |
| Sensor Technology | — | Piezoresistive silicon micromachined |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |
| Body Height | — | 5.46 mm |