MPX10D vs MPX10DP Vergleich

Detaillierter Direktvergleich von MPX10D von NXP Semiconductors und MPX10DP von STMicroelectronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter MPX10D MPX10DP
Marke NXP Semiconductors STMicroelectronics
Kategorie Pressure Sensors Pressure Sensors
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $5,20 $6,09
Operating Pressure Range 0 to 10 kPa (0 to 1.45 psi) 0 kPa to 10 kPa (0 to 1.45 PSI)
Pressure Type Differential Differential
Full-Scale Span 35 mV typical at 3 V supply —
Versorgungsspannung 3 V typical —
Sensitivity approximately 3.5 mV / kPa —
Ausgangstyp Analog differential voltage (Wheatstone bridge) Analog Wheatstone bridge (uncompensated)
Offset [DATA_NEEDED: typical offset value] —
Linearity [DATA_NEEDED: typical linearity %FS] [DATA_NEEDED: linearity %FS]
Betriebstemperatur [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Gehäuse 4-SIP Module (case 344-15) —
Montageart Through-Hole (single port on top) Through-Hole
Technology Silicon piezoresistive (MEMS strain gauge) —
Compensation Uncompensated (external conditioning required) —
Port Configuration Single side port, differential measurement Dual male 0.19 in (4.93 mm) tube, axial
RoHS-Status Compliant [DATA_NEEDED: RoHS status]
Maximum Overload Pressure — [DATA_NEEDED: maximum overload pressure]
Output Voltage Span — 0 mV to 35 mV at 3 V excitation
Supply Voltage (Excitation) — 3 V DC typical
Gehäuse / Bauform — 4-SIP Module
Bridge Impedance — [DATA_NEEDED: input/output bridge resistance]
Temperature Compensation — None (uncompensated)
Media Compatibility — Dry gases (non-corrosive)

Datenblätter & Ressourcen

Alle Produkte durchsuchen BOM erstellen Angebot anfordern