MPX10D vs MPX10DP Comparación
Comparación detallada lado a lado de MPX10D por NXP Semiconductors y MPX10DP por STMicroelectronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MPX10D - 10 kPa Uncompensated Pressure Sensor | NXP / STMicroelectronics
MPX10D ✓ ActivoSTMicroelectronics
MPX10DP - 10kPa Differential Pressure Sensor 35mV | STMicroelectronics
MPX10DP ✓ ActivoComparación de especificaciones
| Parámetro | MPX10D | MPX10DP |
|---|---|---|
| Marca | NXP Semiconductors | STMicroelectronics |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $5,20 | $6,09 |
| Operating Pressure Range | 0 to 10 kPa (0 to 1.45 psi) | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Pressure Type | Differential | Differential |
| Full-Scale Span | 35 mV typical at 3 V supply | — |
| Tensión de alimentación | 3 V typical | — |
| Sensitivity | approximately 3.5 mV / kPa | — |
| Tipo de salida | Analog differential voltage (Wheatstone bridge) | Analog Wheatstone bridge (uncompensated) |
| Offset | [DATA_NEEDED: typical offset value] | — |
| Linearity | [DATA_NEEDED: typical linearity %FS] | [DATA_NEEDED: linearity %FS] |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Encapsulado | 4-SIP Module (case 344-15) | — |
| Tipo de montaje | Through-Hole (single port on top) | Through-Hole |
| Technology | Silicon piezoresistive (MEMS strain gauge) | — |
| Compensation | Uncompensated (external conditioning required) | — |
| Port Configuration | Single side port, differential measurement | Dual male 0.19 in (4.93 mm) tube, axial |
| Estado RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Maximum Overload Pressure | — | [DATA_NEEDED: maximum overload pressure] |
| Output Voltage Span | — | 0 mV to 35 mV at 3 V excitation |
| Supply Voltage (Excitation) | — | 3 V DC typical |
| Encapsulado / Carcasa | — | 4-SIP Module |
| Bridge Impedance | — | [DATA_NEEDED: input/output bridge resistance] |
| Temperature Compensation | — | None (uncompensated) |
| Media Compatibility | — | Dry gases (non-corrosive) |