MPX5010GP vs MPX5010DP Vergleich

Detaillierter Direktvergleich von MPX5010GP von NXP Semiconductors und MPX5010DP von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MPX5010GP MPX5010GP - 0-10kPa Vented Gauge Pressure Sensor | NXP

MPX5010GP - 0-10kPa Vented Gauge Pressure Sensor | NXP

MPX5010GP Nrnd
NXP Semiconductors
MPX5010DP MPX5010DP - 10kPa Differential Pressure Sensor, 5V | NXP/ST

MPX5010DP - 10kPa Differential Pressure Sensor, 5V | NXP/ST

MPX5010DP ✓ Aktiv

Spezifikationsvergleich

Parameter MPX5010GP MPX5010DP
Marke NXP Semiconductors NXP Semiconductors
Kategorie Pressure Sensors Pressure Sensors
Lebenszyklusstatus NRND Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $10,85 $9,60
Pressure Type Vented Gauge Differential
Operating Pressure Range 0 kPa to 10 kPa (0 to 1.45 PSI) 0 kPa to 10 kPa (0 to 1.45 PSI)
Maximum Overload Pressure [DATA_NEEDED: maximum overload pressure] [DATA_NEEDED: max overload kPa]
Versorgungsspannung 4.75 V to 5.25 V (typical 5 V) 4.75 V to 5.25 V (5 V typical)
Versorgungsstrom [DATA_NEEDED: supply current] [DATA_NEEDED: supply current mA]
Ausgangstyp Analog, ratiometric Analog, ratiometric
Ausgangsspannungsbereich 0.2 V to 4.7 V 0.2 V to 4.7 V
Full-Scale Span 4.5 V (typical) —
Zero Pressure Offset 0.2 V typical at VS = 5 V —
Accuracy ±1.5% (per datasheet, factory calibrated) —
Betriebstemperatur [DATA_NEEDED: operating temperature range] 0 C to +85 C (compensated)
Compensated Temperature 0 °C to 85 °C —
Port Configuration Male 0.19" (4.93 mm) tube, single vented port Dual axial ports, 4.93 mm (0.19 in) tube
Gehäuse 6-SIP module (Unibody) 6-SIP Module
Technology Piezoresistive MEMS with on-chip ASIC Piezoresistive, monolithic silicon, on-chip signal conditioned
Montageart Through-Hole Through-hole (SIP)
RoHS-Status [DATA_NEEDED: RoHS compliance status] Compliant
Lead-Free [DATA_NEEDED: lead-free status] —
Sensitivity — 450 mV/kPa (typical)
Linearity — ±1.5% VFSS (typical, 0-85 C)
Storage Temperature — [DATA_NEEDED: storage temperature C]

Datenblätter & Ressourcen

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