MPX5050DP vs MPX5050GP Vergleich
Detaillierter Direktvergleich von MPX5050DP von NXP Semiconductors und MPX5050GP von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MPX5050DP | MPX5050GP |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $8,65 | $7,85 |
| Manufacturer | NXP Semiconductors | — |
| Sensortyp | Differential Pressure Sensor | — |
| Operating Principle | Piezoresistive (MEMS silicon) | — |
| Pressure Range | 0 kPa to 50 kPa (0 PSI to 7.25 PSI) | 0 kPa to 50 kPa (0 PSI to 7.25 PSI) |
| Pressure Port Type | Differential, dual tube port (Male, 0.19" / 4.93 mm Tube) | — |
| Ausgangstyp | Analog ratiometric voltage | Analog Voltage (ratiometric) |
| Ausgangsspannungsbereich | 0.2 V to 4.7 V | 0.2 V to 4.7 V |
| Full-Scale Span | 4.5 V typical | — |
| Versorgungsspannung | 5.0 V nominal (4.75 V to 5.25 V) | 4.75 V to 5.25 V (5 V nominal) |
| Sensitivity | 90 mV/kPa typical | — |
| Accuracy | [DATA_NEEDED: full temperature accuracy band] | 2.5% (per distributor data) |
| Response Time | 1 ms typical | — |
| Overpressure Rating | 200 kPa | — |
| Betriebstemperatur | -40C to +125C | -40 C to +125 C |
| Gehäuse | 6-SIP Module (SOT1693-1 / Case 1351-01) | 6-SIP Module |
| Montageart | Through-Hole (with dual pressure ports) | Through-Hole |
| Versorgungsstrom | [DATA_NEEDED: quiescent supply current] | 7 mA nominal |
| RoHS-Status | Compliant | Compliant |
| Pressure Type | — | Vented Gauge |
| Maximum Overpressure | — | 200 kPa (per MPX5050 family) |
| Port Type | — | 0.19 inch (4.93 mm) Male Tube, Vented |
| Technology | — | Piezoresistive MEMS, on-chip conditioned |
| Temperature Compensation | — | On-chip, calibrated |