MPXHZ6115A6T1 vs MPXH6115AC6U Vergleich

Detaillierter Direktvergleich von MPXHZ6115A6T1 von NXP Semiconductors und MPXH6115AC6U von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MPXHZ6115A6T1 MPXHZ6115A6T1 - 15-115 kPa Absolute Pressure Sensor | NXP | 8-SOIC

MPXHZ6115A6T1 - 15-115 kPa Absolute Pressure Sensor | NXP | 8-SOIC

MPXHZ6115A6T1 ✓ Aktiv
NXP Semiconductors
MPXH6115AC6U MPXH6115AC6U - 15-115 kPa Absolute Pressure Sensor, 5V, 8-SOIC

MPXH6115AC6U - 15-115 kPa Absolute Pressure Sensor, 5V, 8-SOIC

MPXH6115AC6U ✓ Aktiv

Spezifikationsvergleich

Parameter MPXHZ6115A6T1 MPXH6115AC6U
Marke NXP Semiconductors NXP Semiconductors
Kategorie Pressure Sensors Pressure Sensors
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $10,85 $5,75
Pressure Type Absolute Absolute
Operating Pressure Range 15 kPa to 115 kPa (2.18 PSI to 16.68 PSI) 2.18 PSI to 16.68 PSI (15 kPa to 115 kPa)
Maximum Overpressure 400 kPa (58.02 PSI) —
Ausgangstyp Analog Voltage Analog, ratiometric to VCC
Ausgangsspannungsbereich 0.2 V to 4.7 V (at 5 V supply) 0.2 V to 4.7 V (at 5 V supply)
Versorgungsspannung 5 V (typical, [DATA_NEEDED: full min/max range]) 4.75 V to 5.25 V (5 V typical)
Accuracy ±1.5% (0 °C to 85 °C) —
Temperature Compensation Range -40 °C to +125 °C —
Betriebstemperaturbereich -40 °C to +125 °C -40 C to +125 C
Gehäuse 8-SOIC (0.295", 7.50 mm Width), Surface Mount 8-SOIC (0.335 inch, 8.50 mm width) Top Port
Port Style No Port (media-resistant PPS surface mount) —
Sensor Technology MEMS silicon strain-gauge with bipolar op-amp signal conditioning —
Montageart Surface Mount (PPS thermoplastic) Surface Mount
RoHS-Status [DATA_NEEDED: RoHS compliance status] Compliant
Media Compatibility Media-resistant PPS package; dry gas media recommended —
Sensitivity — 45.9 mV/kPa (typical)
Port Type — Male - 0.13 inch (3.3 mm) Tube, Top
Compensated Temperature Range — 0 C to +85 C
Signal Conditioning — On-chip bipolar op-amp + thin-film resistor network
Technology — Piezoresistive MEMS, monolithic silicon
Port Orientation — Top-side vertical
MSL-Level — [DATA_NEEDED: MSL rating]

Datenblätter & Ressourcen

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