MPXM2202GST1 vs MPXM2102GS Vergleich

Detaillierter Direktvergleich von MPXM2202GST1 von STMicroelectronics und MPXM2102GS von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MPXM2102GS MPXM2102GS - 100kPa Vented Gauge Pressure Sensor | NXP

MPXM2102GS - 100kPa Vented Gauge Pressure Sensor | NXP

MPXM2102GS Obsolete

Spezifikationsvergleich

Parameter MPXM2202GST1 MPXM2102GS
Marke STMicroelectronics NXP Semiconductors
Kategorie Pressure Sensors Pressure Sensors
Lebenszyklusstatus Aktiv Obsolete
Lagerstatus In Stock In Stock
Stückpreis (USD) $8,10 $4,35
Pressure Type Vented Gauge Vented Gauge
Operating Pressure Range 0 kPa to 200 kPa (0 psi to 29.01 psi) 0 kPa to 100 kPa (0 to 14.5 PSI)
Maximum Overpressure [DATA_NEEDED: maximum overpressure rating] —
Ausgangstyp Analog Wheatstone bridge (millivolt differential) —
Full-Scale Span 0 mV to 40 mV at 10 V excitation —
Linearity ±0.25% (P2 grade) [DATA_NEEDED: linearity %FS]
Versorgungsspannung 10 V typical (sensor excitation) 10 V typical (max 16 V)
Betriebstemperatur 0 °C to +85 °C (compensated range) -40 C to +125 C
Storage Temperature [DATA_NEEDED: storage temperature] —
Temperature Compensation On-chip, 0 °C to +85 °C On-chip (laser-trimmed)
Port Type Male barbed tube, top-side, 0.12" (2.97 mm) —
Gehäuse 5-SMD M-PAK module, top port —
Montageart Surface Mount (SMD Gull-Wing leads) Surface Mount
RoHS-Status Compliant unknown
Technology Piezoresistive silicon MEMS, single-element Piezoresistive silicon strain gauge
Bridge Resistance [DATA_NEEDED: input/output bridge resistance] —
Ausgangsspannung — 0 mV to 40 mV at 10 V excitation
Sensitivity — 0.4 mV/kPa nominal
Pressure Port — Top-mounted tube (0.12" / 2.97 mm)
Port Configuration — Single port, vented gauge
Package Type — 5-SMD Module, M-PAC (MPAK-4)
Diaphragm — Single monolithic silicon
Series — MPX2102

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