MPXM2202GST1 vs MPXM2102GS 비교

다음의 상세 나란히 비교: MPXM2202GST1 제조: STMicroelectronics 및 MPXM2102GS 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MPXM2102GS MPXM2102GS - 100kPa Vented Gauge Pressure Sensor | NXP

MPXM2102GS - 100kPa Vented Gauge Pressure Sensor | NXP

MPXM2102GS Obsolete

사양 비교

파라미터 MPXM2202GST1 MPXM2102GS
브랜드 STMicroelectronics NXP Semiconductors
카테고리 Pressure Sensors Pressure Sensors
수명 주기 상태 활성 Obsolete
재고 상태 In Stock In Stock
단가 (USD) $8.10 $4.35
Pressure Type Vented Gauge Vented Gauge
Operating Pressure Range 0 kPa to 200 kPa (0 psi to 29.01 psi) 0 kPa to 100 kPa (0 to 14.5 PSI)
Maximum Overpressure [DATA_NEEDED: maximum overpressure rating] —
출력 유형 Analog Wheatstone bridge (millivolt differential) —
Full-Scale Span 0 mV to 40 mV at 10 V excitation —
Linearity ±0.25% (P2 grade) [DATA_NEEDED: linearity %FS]
공급 전압 10 V typical (sensor excitation) 10 V typical (max 16 V)
동작 온도 0 °C to +85 °C (compensated range) -40 C to +125 C
Storage Temperature [DATA_NEEDED: storage temperature] —
Temperature Compensation On-chip, 0 °C to +85 °C On-chip (laser-trimmed)
Port Type Male barbed tube, top-side, 0.12" (2.97 mm) —
패키지 5-SMD M-PAK module, top port —
실장 유형 Surface Mount (SMD Gull-Wing leads) Surface Mount
RoHS 상태 Compliant unknown
Technology Piezoresistive silicon MEMS, single-element Piezoresistive silicon strain gauge
Bridge Resistance [DATA_NEEDED: input/output bridge resistance] —
출력 전압 — 0 mV to 40 mV at 10 V excitation
Sensitivity — 0.4 mV/kPa nominal
Pressure Port — Top-mounted tube (0.12" / 2.97 mm)
Port Configuration — Single port, vented gauge
Package Type — 5-SMD Module, M-PAC (MPAK-4)
Diaphragm — Single monolithic silicon
Series — MPX2102

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