MPXV12GW6U vs MPXV7025DP Vergleich

Detaillierter Direktvergleich von MPXV12GW6U von NXP Semiconductors und MPXV7025DP von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MPXV12GW6U MPXV12GW6U - 10 kPa Uncompensated Pressure Sensor | NXP

MPXV12GW6U - 10 kPa Uncompensated Pressure Sensor | NXP

MPXV12GW6U ✓ Aktiv
NXP Semiconductors
MPXV7025DP MPXV7025DP - 5V ±25kPa Differential Pressure Sensor | NXP/ST

MPXV7025DP - 5V ±25kPa Differential Pressure Sensor | NXP/ST

MPXV7025DP ✓ Aktiv

Spezifikationsvergleich

Parameter MPXV12GW6U MPXV7025DP
Marke NXP Semiconductors NXP Semiconductors
Kategorie Pressure Sensors Pressure Sensors
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $5,10 $8,05
Operating Pressure Range 0 kPa to 10 kPa (1.45 PSI) —
Ausgangstyp Analog Millivolt (Wheatstone bridge) Analog voltage, ratiometric
Output Span 0 mV to 55 mV at 3 V excitation —
Excitation Voltage 3 V typical —
Pressure Port Type Top port, 0.22" (5.59 mm) tube —
Gehäuse / Bauform 8-SMD, Gull Wing, Top Port —
Montageart Surface Mount Surface Mount
Betriebstemperatur -40 C to +125 C 0 °C to +85 °C
Accuracy [DATA_NEEDED: linearity + temperature coefficient] —
Configuration Vented Gauge (reference to atmosphere) —
Sensor Technology Silicon piezoresistive (MEMS strain gauge) —
Off-Pressure Offset 0 mV minimum (no offset specified) —
Compensation Uncompensated (external calibration required) —
RoHS-Status Compliant Compliant
MSL-Level [DATA_NEEDED: MSL rating] —
Bridge Resistance [DATA_NEEDED: input / output bridge impedance] —
Typical Sensitivity [DATA_NEEDED: mV/kPa at 3 V] —
Pressure Type — Differential (Dual Port)
Pressure Range — -25 kPa to +25 kPa (-3.63 PSI)
Operating Pressure Max — ±25 kPa
Port Style — Dual ports, same side, male 0.13" (3.3 mm) tube
Versorgungsspannung — 5 V DC nominal
Ausgangsspannungsbereich — 0.2 V to 4.7 V
Sensitivity — ~90 mV/kPa (at 5 V supply)
Linearity — ±5 % (over primary range)
Storage Temperature — -30 °C to +100 °C (per datasheet range)
Gehäuse — 8-BSOP (SOP-8, 12.06 mm width), surface mount
Signal Conditioning — On-chip, calibrated and temperature compensated

Datenblätter & Ressourcen

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