MPXV5004GC7U vs MPVZ5004GW7U Vergleich
Detaillierter Direktvergleich von MPXV5004GC7U von NXP Semiconductors und MPVZ5004GW7U von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MPXV5004GC7U - 0-3.92 kPa Vented Gauge Pressure Sensor | NXP
MPXV5004GC7U ✓ AktivSpezifikationsvergleich
| Parameter | MPXV5004GC7U | MPVZ5004GW7U |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $7,10 | $6,75 |
| Pressure Type | Vented Gauge | Vented Gauge |
| Operating Pressure Range | 0 kPa to 3.92 kPa (0 to 0.57 PSI) | 0 kPa to 3.92 kPa (0 to 0.57 psi) |
| Maximum Overpressure | 16 kPa | — |
| Versorgungsspannung | 4.75 V to 5.25 V (5 V typical) | 5.0 V (typ) |
| Ausgangsspannungsbereich | 1 V to 4.9 V | — |
| Sensitivity | 1 V/kPa (typical) | approx. 1.0 V / kPa |
| Accuracy | +/- 1.5 percent VFSS | [DATA_NEEDED: linearity/error %] |
| Betriebstemperatur | 0 C to +85 C | 0 °C to 85 °C |
| Storage Temperature | -30 C to +100 C | [DATA_NEEDED: storage temperature range] |
| Port Type | Top port tube, 0.13 inch (3.17 mm) diameter | — |
| Ausgangstyp | Analog, ratiometric voltage | Analog voltage, ratiometric |
| Gehäuse | 8-pin DIP, 0.550 inch (13.97 mm), through-hole | 8-DIP Module (Case 1560-02) |
| Media Compatibility | Dry non-corrosive gases | Non-corrosive dry gases (air) |
| Montageart | Through-hole | Through-Hole (DIP module with tube port) |
| RoHS-Status | [DATA_NEEDED: rohs_status] | [DATA_NEEDED: confirm from datasheet] |
| Pressure Port | — | Male 0.22" (5.59 mm) tube, single axial |
| Output Voltage Span | — | 1.0 V to 4.9 V (at 5 V excitation) |
| Output Voltage at 0 kPa | — | 1.0 V typ |
| Versorgungsstrom | — | 4 mA typ (per datasheet family) |
| Technology | — | Piezoresistive MEMS, monolithic silicon |
| Signal Conditioning | — | On-chip amplifier, temperature-compensated, calibrated |