MRF5S21100HSR5 vs MRF5S21100HSR3 Vergleich
Detaillierter Direktvergleich von MRF5S21100HSR5 von NXP Semiconductors und MRF5S21100HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF5S21100HSR5 - 23W RF Power MOSFET 2.17GHz NI-780S | NXP
MRF5S21100HSR5 ✓ AktivNXP Semiconductors
MRF5S21100HSR3 - 23W RF Power MOSFET, 2110-2170 MHz | NXP
MRF5S21100HSR3 ObsoleteSpezifikationsvergleich
| Parameter | MRF5S21100HSR5 | MRF5S21100HSR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Obsolete |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $19,80 | $37,27 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Part Status | Active | Obsolete |
| Transistortyp | N-Channel RF Power MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | LDMOS (Laterally Diffused MOS) | — |
| Operating Frequency | 2.16 GHz to 2.17 GHz | — |
| Drain-to-Source Voltage (Vdss) Max | 65 V | — |
| Test Supply Voltage | 28 V | — |
| Output Power (Pout) | 23 W (CW) | — |
| Power Gain | 13.5 dB (typical) | 13.5 dB |
| Drain Current (Id) | 1.05 A | — |
| Gehäuse / Bauform | NI-780S (ceramic flange-mount) | NI-780S (lower thermal resistance, ceramic flanged) |
| Montageart | Chassis / Flange Mount (through-hole RF) | Chassis / flange mount (through-hole, surface ceramic) |
| Betriebstemperaturbereich | -40C to +150C (junction) | — |
| RoHS-Status | [DATA_NEEDED: RoHS status from NXP product page] | Compliant (low gold plating, 40 microinches nominal) |
| Lead-Free | [DATA_NEEDED: lead-free finish] | — |
| Frequency | — | 2.16 GHz to 2.17 GHz (2110-2170 MHz) |
| Test Voltage | — | 28 V |
| Test Current | — | 1.05 A |
| Power Output (Avg, 2x W-CDMA) | — | 23 W |
| Voltage - Rated (Max V DSS) | — | 65 V |
| Maximum VDD Operation | — | 32 V (qualified) |
| Supplier Device Package | — | NI-780S |
| Configuration | — | Single, Class AB |
| ESD Protection | — | Integrated |
| Matching | — | Internally matched (input and output) |
| Lead Finish | — | Gold, 40 microinches nominal |
| Packaging | — | Tape and Reel |
| Designed Application | — | W-CDMA, TDMA, CDMA, multicarrier base station PA |