MRF5S21100HSR5 vs MRF5S21100HSR3 Comparaison
Comparaison détaillée côte à côte de MRF5S21100HSR5 par NXP Semiconductors et MRF5S21100HSR3 par NXP Semiconductors. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
NXP Semiconductors
MRF5S21100HSR5 - 23W RF Power MOSFET 2.17GHz NI-780S | NXP
MRF5S21100HSR5 ✓ ActifNXP Semiconductors
MRF5S21100HSR3 - 23W RF Power MOSFET, 2110-2170 MHz | NXP
MRF5S21100HSR3 ObsoleteComparaison des spécifications
| Paramètre | MRF5S21100HSR5 | MRF5S21100HSR3 |
|---|---|---|
| Marque | NXP Semiconductors | NXP Semiconductors |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Obsolete |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $19,80 | $37,27 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Part Status | Active | Obsolete |
| Type de transistor | N-Channel RF Power MOSFET | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | LDMOS (Laterally Diffused MOS) | — |
| Operating Frequency | 2.16 GHz to 2.17 GHz | — |
| Drain-to-Source Voltage (Vdss) Max | 65 V | — |
| Test Supply Voltage | 28 V | — |
| Output Power (Pout) | 23 W (CW) | — |
| Power Gain | 13.5 dB (typical) | 13.5 dB |
| Drain Current (Id) | 1.05 A | — |
| Boîtier / Format | NI-780S (ceramic flange-mount) | NI-780S (lower thermal resistance, ceramic flanged) |
| Type de montage | Chassis / Flange Mount (through-hole RF) | Chassis / flange mount (through-hole, surface ceramic) |
| Plage de température de fonctionnement | -40C to +150C (junction) | — |
| Statut RoHS | [DATA_NEEDED: RoHS status from NXP product page] | Compliant (low gold plating, 40 microinches nominal) |
| Lead-Free | [DATA_NEEDED: lead-free finish] | — |
| Frequency | — | 2.16 GHz to 2.17 GHz (2110-2170 MHz) |
| Test Voltage | — | 28 V |
| Test Current | — | 1.05 A |
| Power Output (Avg, 2x W-CDMA) | — | 23 W |
| Voltage - Rated (Max V DSS) | — | 65 V |
| Maximum VDD Operation | — | 32 V (qualified) |
| Supplier Device Package | — | NI-780S |
| Configuration | — | Single, Class AB |
| ESD Protection | — | Integrated |
| Matching | — | Internally matched (input and output) |
| Lead Finish | — | Gold, 40 microinches nominal |
| Packaging | — | Tape and Reel |
| Designed Application | — | W-CDMA, TDMA, CDMA, multicarrier base station PA |