MRF6S21100HR3 vs MRF6S27085HR3 Vergleich

Detaillierter Direktvergleich von MRF6S21100HR3 von NXP Semiconductors und MRF6S27085HR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF6S21100HR3 MRF6S21100HR3 - 23W 2.11-2.17GHz W-CDMA RF LDMOS | NXP

MRF6S21100HR3 - 23W 2.11-2.17GHz W-CDMA RF LDMOS | NXP

MRF6S21100HR3 ✓ Aktiv
NXP Semiconductors
MRF6S27085HR3 MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS

MRF6S27085HR3 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF6S21100HR3 MRF6S27085HR3
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $38,95 $23,75
Transistortyp LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) LDMOS, N-Channel, Enhancement-Mode, Lateral
Configuration Single —
Frequency Band 2.11 GHz to 2.17 GHz —
Output Power (Average) 23 W (W-CDMA, CW equivalent ~100 W PEP) —
Power Gain (Typ) 15.9 dB at 2.14 GHz 15.5 dB
Drain-Source Voltage Rating (VDS max) 68 V —
Test Supply Voltage (VDD) 28 V —
Quiescent Drain Current (IDQ) 950 mA —
Test Drain Current 950 mA —
Gehäuse NI-780H-2L (ceramic flange) —
Montageart Surface Mount / bolt-down flange Flange / Chassis mount with bolt-down thermal pad
Maximum Power Dissipation (Abs) 388 W —
Operating Mode Class AB (PCN/PCS/cellular, WLL, TD-SCDMA) —
Terminal Position Dual —
Lead Free Status [DATA_NEEDED: RoHS/lead-free explicit statement] —
RoHS-Status [DATA_NEEDED: explicit RoHS compliance statement] Compliant per Freescale/NXP material declaration
Manufacturer — NXP Semiconductors (formerly Freescale)
Part Number — MRF6S27085HR3
Application — RF Power Amplifier
Operating Frequency — 2600 MHz to 2700 MHz
Test Frequency — 2.66 GHz
Output Power (Average, P1dB-rated) — 20 W
Drain-Source Voltage Rating — 68 V
Operating Drain Voltage — 28 V
Quiescent Bias Current (Test) — 900 mA
Gehäuse / Bauform — NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange mount
Pin-Anzahl — 3 (Drain, Gate, Source)
Packaging — Tape & Reel (suffix HR3)
Technology — Lateral DMOS (LDMOS)

Datenblätter & Ressourcen

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