MRF6S27085HR3 - 20W RF Power MOSFET, 2.6-2.7GHz, 28V LDMOS
Teilenummer: MRF6S27085HR3 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $38.5 | $38,50 |
| 10 | $34.2 | $342,00 |
| 100 | $29.8 | $2.980,00 |
| 500 | $26.4 | $13.200,00 |
| 1.000 | $23.75 | $23.750,00 |
MRF6S27085HR3 Übersicht
An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power transistor is a type of power MOSFET optimized for high-frequency, high-power amplification. LDMOS parts sit within the broader taxonomy: RF power transistor -> discrete RF semiconductor -> power amplifier building block. They dominate cellular base-station power amplifier (PA) designs because of their high breakdown voltage, excellent thermal stability, and simplified single-supply biasing versus older bipolar RF transistors.
Key features include 28 V drain operating voltage, 68 V drain-source breakdown rating, 900 mA typical bias current at 28 V test, and 15.5 dB gain in the 2.6-2.7 GHz band. Thermal resistance is characterized for the NI-780 ceramic flange-mount package, which is bolted directly to the amplifier heat-sink for lowest possible junction-to-case thermal impedance. The device is internally input/output matched for the 2.6 GHz band, reducing external matching complexity.
The MRF6S27085HR3 uses a lateral DMOS cell with a thermally optimized ceramic package, enabling reliable 20 W CW or W-CDMA-class average power operation. The -HR3 tape-and-reel packaging suffix supports high-volume SMT-compatible flange-mount assembly when paired with automated pick-and-place fixtures, although the ceramic flange itself still requires bolt-down thermal mounting.
Typical applications include W-CDMA/LTE 2.6 GHz micro-cell and macro-cell base-station PAs, WiMAX and WiBro 2.5-2.7 GHz amplifier stages, multi-carrier amplifier (MCPA) final stages, and WLL (Wireless Local Loop) Class AB or Class C driver amplifiers. The same die is also used in pulsed-RF industrial and aerospace links operating in the 2.5-2.7 GHz sub-band.
Designers should ensure the NI-780 flange is bolted to a heat-sink with a thin layer of thermal compound, and that the input/output matching network is tuned for the exact sub-band (2.6 vs 2.7 GHz) to realize the rated 15.5 dB gain and >30% efficiency. The HSR3 same-die variant shares the NI-780 package but is offered as a different reel orientation/tape configuration for automated assembly.
Drop-in-Alternativen für MRF6S27085HR3 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF6S27085HR3 (gleiche Bauform und Footprint) – abweichend in Mounting Type, Package / Case, RoHS Status, Technology, Transistor Type.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF6S27085HSR3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6S27085HR5
✅ Drop-In✓ Auf Lager
$21.85 / Stück
Datenblatt ansehen →MRF6S21100HR3
✅ Drop-In✓ Auf Lager
$38.95 / Stück
Datenblatt ansehen →MRF6S19100HR3
✅ Drop-In✓ Auf Lager
$95 / Stück
Datenblatt ansehen →MRF6S27085HR3 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF6S27085HR3 |
| Transistortyp | LDMOS, N-Channel, Enhancement-Mode, Lateral |
| Application | RF Power Amplifier |
| Operating Frequency | 2600 MHz to 2700 MHz |
| Test Frequency | 2.66 GHz |
| Output Power (Average, P1dB-rated) | 20 W |
| Power Gain (Typ) | 15.5 dB |
| Drain-Source Voltage Rating | 68 V |
| Operating Drain Voltage | 28 V |
| Quiescent Bias Current (Test) | 900 mA |
| Gehäuse / Bauform | NI-780H-2L (CASE 465-06, STYLE 1), ceramic flange mount |
| Pin-Anzahl | 3 (Drain, Gate, Source) |
| Montageart | Flange / Chassis mount with bolt-down thermal pad |
| Packaging | Tape & Reel (suffix HR3) |
| Technology | Lateral DMOS (LDMOS) |
| RoHS-Status | Compliant per Freescale/NXP material declaration |
MRF6S27085HR3 Pin-Konfiguration
| Pin 1 | Gate — RF input / gate bias lead; biased at approximately +2.5-3.5 V to set quiescent drain current (Idq 900 mA) |
| Pin 2 | Drain — RF output / drain supply lead; connected to +28 V DC via RF choke and matching network |
| Pin 3 | Source — Source lead; tied to the ceramic flange mounting surface (CASE 465-06 STYLE 1) and to RF/DC ground |
Sicherer Arbeitsbereich - DC
Typische Anwendungen
MRF6S27085HR3 ist geeignet für 6 Anwendungs: W-CDMA / LTE 2.6 GHz Base-Station Final-Stage PA, WiMAX / WiBro 2.5-2.7 GHz Amplifier Stage, Multi-Carrier Power Amplifier (MCPA) Final Stage, Class AB Driver Amplifier in Macro-Cell Radio, Wireless Local Loop (WLL) 2.6 GHz Class AB / Class C PA, Pulsed-RF Industrial / Aerospace 2.5-2.7 GHz Link.
W-CDMA / LTE 2.6 GHz Base-Station Final-Stage PA
The MRF6S27085HR3 is the reference Freescale/NXP final-stage PA for micro-cell and pico-cell base stations operating in the 2.6-2.7 GHz LTE Band 38 / Band 41 / n41 / n78 sub-6 GHz band. Its 20 W average output power, 15.5 dB gain at 2.66 GHz, and 28 V LDMOS architecture let it drive a high-efficiency Doherty combiner or single-ended final stage with >30% power-added efficiency under single-carrier W-CDMA drive. Place the part on a copper-spreader heat-sink sized for 25 W continuous dissipation, and use the factory-recommended input/output matching network from the datasheet typical application circuit to realize the rated gain and ACLR linearity.
Empfohlen
WiMAX / WiBro 2.5-2.7 GHz Amplifier Stage
Designed-in by Freescale/NXP for 2.5 GHz WiMAX and Korean WiBro amplifier chains, the MRF6S27085HR3's 2600-2700 MHz operating band covers the WiMAX 2.5-2.69 GHz profile with minor matching-network retuning. Its 28 V LDMOS architecture produces the high peak-to-average ratio (PAR) headroom required by 64-QAM and 16-QAM OFDMA waveforms, while the 15.5 dB gain simplifies the driver-stage chain. Use it in a Class AB linear PA block followed by a digital pre-distortion (DPD) loop to meet the stringent EVM mask at multi-carrier drive.
Empfohlen
Multi-Carrier Power Amplifier (MCPA) Final Stage
Multi-carrier amplifier architectures in the 2.6 GHz band stack several carriers into one PA block; the MRF6S27085HR3 is well-suited as a final device because its high breakdown (68 V) and 28 V operating point preserve linearity under combined multi-carrier drive. Its internally matched input/output network reduces external component count, allowing compact MCPA modules with 4-6 carriers combined to a sector antenna. The NI-780 ceramic flange supports direct bolt-down thermal mounting, which is essential when stacking carriers pushes average dissipation to 15-18 W.
Empfohlen
Class AB Driver Amplifier in Macro-Cell Radio
Use the MRF6S27085HR3 as a driver in a 2.6 GHz macro-cell radio chain where a higher-power final stage (for example the MRF6S27085HR3 plus a 60-80 W output stage) is fed by this part in a balanced configuration. With 15.5 dB gain it provides ample drive while keeping the chain stable; its 28 V bias is compatible with the same supply rail as the final stage. Add a 10 dB directional coupler at the output for forward/reflected power sampling and feed back to an ALC loop for production-line calibration.
Empfohlen
Wireless Local Loop (WLL) 2.6 GHz Class AB / Class C PA
Freescale/NXP datasheet explicitly lists Class AB and Class C operation for WLL applications. The MRF6S27085HR3 in Class C mode delivers higher peak efficiency than Class AB at the expense of linearity, suitable for constant-envelope modulation or frequency-shift-keyed links in the 2.6 GHz band. Use a heat-sink sized for 25-30 W dissipation and add a harmonic filter (typically a 2-section low-pass) at the output to meet ETSI/FCC spurious emissions for fixed-wireless access equipment.
Empfohlen
Pulsed-RF Industrial / Aerospace 2.5-2.7 GHz Link
Beyond cellular, the MRF6S27085HR3 supports pulsed-RF applications in the 2.5-2.7 GHz sub-band including telemetry links, UAV command-and-control, and industrial radar transponders. Its 68 V breakdown and 20 W CW-class thermal design tolerate short-pulse duty cycles up to 25% with high peak power, while the NI-780 flange provides the rugged mechanical mounting required in vibration-prone aerospace environments. Drive the gate with a fast-rise-time pulse modulator and de-couple the drain with low-ESR ceramic bypass to handle the pulsed current transients.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF6S27085HR3 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF6S27085HSR3 | MRF6S27085HR5 | MRF6S21100HR3 | MRF6S19100HR3 |
|---|---|---|---|---|---|
| Package | NI-780H-2L (CASE 465-06, STYLE 1) | NI-780H-2L (CASE 465-06) - same | NI-780H-2L (CASE 465-06) - same | NI-780H-2L (CASE 465-06) - same | NI-780H-2L (CASE 465-06) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Operating Frequency | 2600-2700 MHz | 2600-2700 MHz | 2600-2700 MHz | 2110-2170 MHz | 1930-1990 MHz |
| Output Power (Avg) | 20 W | 20 W | 20 W | ~22 W | ~100 W (different die) |
| Power Gain | 15.5 dB | 15.5 dB | 15.5 dB | 16.5 dB | 16.0 dB |
| Drain Voltage (Operating) | 28 V | 28 V | 28 V | 28 V | 28 V |
| Drain-Source Breakdown | 68 V | 68 V | 68 V | 65 V | 65 V |
| Quiescent Bias Current | 900 mA | 900 mA | 900 mA | 950 mA | 1300 mA |
| Reel Suffix | HR3 | HSR3 (alt orientation) | HR5 | HR3 | HR3 |
Wichtigste Unterscheidungsmerkmale
- Factory-characterized at 2.66 GHz with 15.5 dB gain for 2.6 GHz W-CDMA (vs. MRF6S19100HR3)
- 20 W in NI-780 ceramic flange with proven telecom reliability (vs. MRF6S21100HR3)
- Same die as HSR3 alternate-reel orientation (vs. MRF6S27085HSR3)
Designhinweise
Estimated: at 28 V VDD and 20 W average output power with 30% PAE, the MRF6S27085HR3 dissipates roughly 47 W internally (DC in - RF out = 66.7 W - 20 W). The NI-780 ceramic flange must be bolted to a heat-sink whose thermal resistance (theta_SA) holds junction-to-ambient below 100 C/W to keep Tj below 150 C at 85 C baseplate. Use a thin (~50 um) thermal-interface-material layer; thicker pads degrade RF grounding.
The 50 ohm microstrip matching network from the Freescale application note must use low-loss substrate (Rogers RO4003C or equivalent, er=3.55, h=0.508 mm). Place gate and drain bias chokes (typically 22 nH broadband wirewound) within 3 mm of the package leads to prevent low-frequency oscillation. Source leads are tied to the ceramic flange and must be RF-grounded with multiple low-inductance vias (4-6 vias, 0.3 mm drill) directly under the flange edge.
Do not exceed the 68 V drain-source breakdown rating even briefly - the drain overshoot from load-mismatch can easily exceed twice the supply. Add a TVS diode (e.g. 60 V SMBJ-type) at the drain bias feed. The gate is sensitive to ESD; never bias the gate before the drain supply is ramped. Always use a sequenced bias controller or gate-protection network.
For multi-carrier operation, the second-harmonic trap (typically a quarter-wave open stub at 5.32 GHz) must be placed within lambda/8 of the drain pad to maintain ACLR linearity. Source-pull and load-pull data in the Freescale datasheet identifies the optimum 50 ohm reference; deviating more than 1.5:1 VSWR at the fundamental can drop Pout by 1-2 dB and degrade efficiency by 5 percentage points.
Compliance-Informationen
RoHS compliance per Freescale/NXP material declaration. AEC-Q100 not applicable - this is a discrete RF power MOSFET, not an automotive-grade IC. Halogen-free status not explicitly listed in the provided data.
