MRF6S27015NR1 vs MRF6S27015GNR1 Vergleich
Detaillierter Direktvergleich von MRF6S27015NR1 von NXP Semiconductors und MRF6S27015GNR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MRF6S27015NR1 | MRF6S27015GNR1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $9,35 | $9,50 |
| Manufacturer | NXP Semiconductors (formerly Freescale) | NXP Semiconductors |
| Part Number | MRF6S27015NR1 | — |
| Device Type | RF Power MOSFET, N-Channel, Lateral, Enhancement-Mode | — |
| Frequency Range | 2300 to 2700 MHz | — |
| Typical Test Frequency | 2600 MHz | — |
| Output Power (Avg, W-CDMA) | 3 W | 3 W |
| Drain-Source Voltage (Max, VDS) | 68 V | — |
| Operating Drain Voltage (VDD) | 28 V | — |
| Power Gain (Typical at 2.6 GHz) | 14 dB | — |
| Quiescent Drain Current (IDQ) | 160 mA | — |
| Drain Efficiency (Typical) | [DATA_NEEDED: % value at rated Pout] | — |
| Gehäuse / Bauform | TO-270-2 (Case 1265-09, Style 1) over-molded plastic, gull-wing leads | — |
| Montageart | Surface Mount | Surface Mount (gull-wing leads) |
| VSWR Ruggedness | 10:1 at rated operating voltage | — |
| RoHS-Status | Compliant (RoHS-compliant PPI suffix where applicable) | Compliant |
| Lead-Free Finish | Yes (NiPdAu lead-frame and matte tin leads) | — |
| MSL (Moisture Sensitivity Level) | [DATA_NEEDED: MSL per J-STD-020 rating] | — |
| Betriebs-Sperrschichttemperatur | -40 C to +150 C (per datasheet) | — |
| Part Type | — | RF Power MOSFET, N-Channel, Lateral |
| Technology | — | HV6 Lateral N-Channel Enhancement-Mode MOSFET |
| Gehäuse | — | TO-270-2 (Case 1265-09, Style 1) Gull-Wing |
| Operating Frequency Range | — | 2300 MHz to 2700 MHz |
| Drain-Source Voltage (VDSS) | — | 68 V (max) |
| Operating Drain Voltage (Vdd) | — | 28 V (typical) |
| Power Gain (Typ, 2.6 GHz) | — | 14 dB |
| Test Quiescent Current (IDQ) | — | 160 mA |
| Drain Efficiency (Typ) | — | [DATA_NEEDED: drain efficiency %] |
| Channel Temperature (Tch) | — | [DATA_NEEDED: max channel temp C] |
| Thermal Resistance (Rth) | — | [DATA_NEEDED: junction-to-case thermal resistance C/W] |
| Configuration | — | Single-ended, common-source |
| Target Waveform | — | Single-carrier W-CDMA, LTE, WiMAX |
| Lead-Free | — | Yes |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |