MRF6S27015NR1 - 3W, 28V RF Power MOSFET 2.3-2.7 GHz | NXP
Teilenummer: MRF6S27015NR1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $14.5 | $14,50 |
| 10 | $13.05 | $130,50 |
| 100 | $11.62 | $1.162,00 |
| 500 | $10.45 | $5.225,00 |
| 1.000 | $9.35 | $9.350,00 |
MRF6S27015NR1 Übersicht
RF power MOSFETs are a class of discrete semiconductor devices designed specifically for high-frequency amplification of modulated signals such as W-CDMA, LTE, and WiMAX. They differ from small-signal MOSFETs in using a lateral N-channel structure with very low parasitic capacitance and inductance, allowing efficient operation into the multi-GHz range. They occupy a place in the hierarchy: RF power MOSFET -> RF power transistor -> discrete semiconductor -> semiconductor device.
Key specifications of the MRF6S27015NR1 include a maximum drain-source voltage of 68 V, a typical quiescent drain current of 160 mA at 28 V, an operating frequency range of 2300-2700 MHz, an output power of 3 W average in W-CDMA with 14 dB power gain, and a ruggedness capability against 10:1 VSWR mismatch at its rated operating voltage. The device is built on NXP's HV6 lateral MOSFET process, optimized for Doherty amplifier configurations in macro-cell base-station radios.
Architecturally, the MRF6S27015NR1 uses a high-breakdown lateral DMOS cell layout that provides high drain efficiency (~30% at 2.6 GHz into W-CDMA) and excellent thermal coupling between the active die region and the plastic over-mold. The matched input and 50-ohm-compatible output impedance simplifies PCB integration, allowing engineers to drop the part into existing 2.6 GHz L-PAMR or small-cell reference designs with minimal retuning.
Typical applications include W-CDMA, LTE, and WiMAX base-station transmitter final stages, particularly the carrier and peaking devices in a Doherty configuration. Its 3 W average output capability and high gain also make it suitable for driver stages in higher-power macro-cell amplifiers, repeater units, and small-cell pico-cell radios operating in the 2.3-2.7 GHz wireless bands.
The principal design trade-off is thermal: 28 V operation at 3 W average gives rise to roughly 7-10 W peak dissipation during W-CDMA peaks (PAPR ~10 dB). Engineers must provide adequate copper thermal vias beneath the TO-270-2 package, sized to keep the junction below 150 C during worst-case conditions.
This page synthesizes distributor pricing, drop-in and pin-compatible alternatives, and practical thermal/RF layout notes beyond what the manufacturer datasheet alone offers.
Drop-in-Alternativen für MRF6S27015NR1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF6S27015NR1 (gleiche Bauform und Footprint) – abweichend in Manufacturer, Mounting Type, RoHS Status.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF6S27015GNR1
✅ Drop-In✓ Auf Lager
$9.5 / Stück
Datenblatt ansehen →MRF6S27015NR1
✅ Drop-In✓ Auf Lager
$9.35 / Stück
Datenblatt ansehen →MRF6S19020NR1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRF6S21010NR1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRF6S2310NR1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRF6S27015NR1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF6S27015NR1 |
| Device Type | RF Power MOSFET, N-Channel, Lateral, Enhancement-Mode |
| Frequency Range | 2300 to 2700 MHz |
| Typical Test Frequency | 2600 MHz |
| Output Power (Avg, W-CDMA) | 3 W |
| Drain-Source Voltage (Max, VDS) | 68 V |
| Operating Drain Voltage (VDD) | 28 V |
| Power Gain (Typical at 2.6 GHz) | 14 dB |
| Quiescent Drain Current (IDQ) | 160 mA |
| Gehäuse / Bauform | TO-270-2 (Case 1265-09, Style 1) over-molded plastic, gull-wing leads |
| Montageart | Surface Mount |
| VSWR Ruggedness | 10:1 at rated operating voltage |
| RoHS-Status | Compliant (RoHS-compliant PPI suffix where applicable) |
| Lead-Free Finish | Yes (NiPdAu lead-frame and matte tin leads) |
| Betriebs-Sperrschichttemperatur | -40 C to +150 C (per datasheet) |
MRF6S27015NR1 Pin-Konfiguration
| Pin 1 | Gate — RF input / gate bias |
| Pin 2 | Drain — RF output / drain tab / thermal path |
| Pin 3 | Source — Source return / RF ground |
Sicherer Arbeitsbereich (Drain Current vs. Drain-Source Voltage)
Typische Anwendungen
MRF6S27015NR1 ist geeignet für 6 Anwendungs: 2.6 GHz W-CDMA Base-Station Doherty Final Stage, LTE Base-Station Repeater Transmitter, WiMAX / BRS Customer-Premise Equipment, Driver Stage for Higher-Power 2.6 GHz LDMOS Final Stages, Public-Safety and Government Band Amplifiers, Industrial IoT and Smart-City Wireless Backhaul.
2.6 GHz W-CDMA Base-Station Doherty Final Stage
The MRF6S27015NR1 delivers 3 W average W-CDMA output power at 2.6 GHz with 14 dB gain from a 28 V rail, making it ideal for the peaking amplifier in small-cell Doherty transmitters. Its TO-270-2 over-mold package and matched 50-ohm input simplify PCB integration into compact macro-cell radio modules. Per the datasheet, drain efficiency in Doherty mode typically exceeds 30% at the rated 3 W output, enabling low-heat macro-radio operation at 2500-2700 MHz WiMAX/BRS bands without compromise in linearity for W-CDMA signals.
Empfohlen
LTE Base-Station Repeater Transmitter
In LTE pico-cell and outdoor small-cell repeaters operating from 2500-2700 MHz, the MRF6S27015NR1's 28 V, 14 dB gain, 3 W average output capability delivers the linearity and dynamic range required by 4G LTE signals. Compared to lower-voltage designs, 28 V operation allows long coaxial cable runs between amplifier and antenna without severe output-stage loss. Per the NXP datasheet, the device maintains stable gain and ACPR performance over the full -40 C to +85 C industrial temperature range typical of outdoor repeater enclosures.
Empfohlen
WiMAX / BRS Customer-Premise Equipment
The MRF6S27015NR1 supports final-stage amplification in 2.5-2.7 GHz BRS (Broadband Radio Service) and WiMAX outdoor CPE transmitters, where the 28 V bias allows higher linear output power at modest power dissipation. Its 14 dB gain at 2.6 GHz minimizes the required driver-stage bill-of-materials, allowing designers a single-stage solution for residential WiMAX CPE. Per the datasheet, the 10:1 VSWR mismatch ruggedness protects the device against antenna mismatch in field-deployed outdoor installations.
Empfohlen
Driver Stage for Higher-Power 2.6 GHz LDMOS Final Stages
The MRF6S27015NR1 is well-suited as a 3 W driver for higher-power 2.6 GHz LDMOS final-stage amplifiers (e.g., MRF6S26050L) in macro-cell radio base stations. Its 14 dB gain from 28 V provides the necessary gain budget when the final-stage LDMOS contributes only 12-15 dB in the matching network. This driver+final cascade architecture simplifies the overall Doherty amplifier solution: a single MRF6S27015NR1 driver feeds a 50 W LDMOS final without intermediate buffers, saving PCB area in compact macro-radio designs.
Empfohlen
Public-Safety and Government Band Amplifiers
Operating from 2500-2700 MHz, the MRF6S27015NR1 can also be deployed in licensed public-safety amplifier systems, government band-boost boosters, and tactical-radio retransmission panels. Its 3 W average, 14 dB gain, 28 V topology yields the linearity needed for the digital modulation formats used by P25/Tetra relay networks, while the lateral MOSFET's 10:1 VSWR ruggedness protects against variable antenna loading in field-deployed scenarios. Per the datasheet, the package's thermal via field is consistent with MIL-STD-810-style thermal design practices.
Empfohlen
Industrial IoT and Smart-City Wireless Backhaul
Smart-city wireless backhaul radios operating in the 2.5-2.7 GHz BRS band benefit from the MRF6S27015NR1's compact TO-270-2 over-mold package, which supports high-density SMT assembly for cost-sensitive industrial IoT transceivers. Its 14 dB gain at 28 V allows single-stage 3 W output for last-mile backhaul radio transmitters, while the lateral MOSFET's high-efficiency Doherty operation reduces heat dissipation in sealed urban enclosures. Per NXP, the device's ruggedness and band-shift compatibility with the GNR1 variant enable single-PN dual-band backhaul radio designs.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF6S27015NR1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF6S27015GNR1 | MRF6S19020NR1 | MRF6S21010NR1 | MRF6S2310NR1 |
|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | TO-270-2 (Case 1265-09) | TO-270-2 (Case 1265-09) - same | TO-270-2 (Case 1265-09) - same | TO-270-2 (Case 1265-09) - same | TO-270-2 (Case 1265-09) - same |
| Frequency Range | 2500-2700 MHz | 2300-2400 MHz | 1930-1990 MHz | 2110-2170 MHz | 2300-2400 MHz |
| Output Power (Avg, W-CDMA) | 3 W | 3 W | 2 W | 1 W | 10 W |
| Drain Voltage | 28 V | 28 V | 28 V | 28 V | 28 V |
| VSWR Ruggedness | 10:1 | 10:1 | 10:1 | 10:1 | 10:1 |
| Mounting Type | Surface Mount | Surface Mount - same | Surface Mount - same | Surface Mount - same | Surface Mount - same |
Wichtigste Unterscheidungsmerkmale
- Tighter 2.6 GHz band focus than the GNR1 sister part (vs. MRF6S27015GNR1)
- Higher power capability than MRF6S21010NR1 driver-stage part (vs. MRF6S21010NR1)
- Lower power but smaller than MRF6S2310NR1 10 W part (vs. MRF6S2310NR1)
Designhinweise
The TO-270-2 package lacks a metallic heatsink tab, so heat removal is entirely through PCB copper planes beneath the drain lead. Per the NXP datasheet, a 2 oz copper substrate with at least 4 thermal vias at 0.3 mm drill/star pattern is recommended for the 7-10 W peak dissipation typical of 3 W W-CDMA Doherty operation. Operating junction temperature should not exceed 150 C; for outdoor repeater designs, plan for 30-40 C junction rise above the 85 C ambient ceiling.
Use a Rogers 4350B (or equivalent low-loss ceramic-PTFE) substrate for 2.6 GHz layouts to minimize dielectric loss. The gate and drain matching networks should use microstrip lines with width computed from the substrate DK; quarter-wave transformer lines from 50 ohm to the device impedance are typical. Keep the gate bypass capacitor within 2 mm of the gate lead and route the source return directly through the package center via to minimize common-source inductance.
Do not confuse the MRF6S27015NR1 with its band-shifted sibling MRF6S27015GNR1 - the 'G' in part-number MRF6S27015GNR1 indicates 2.3-2.4 GHz, not 2.6 GHz operation. Substituting one for the other in a 2.6 GHz layout will cause severe gain roll-off and reduced drain efficiency. Always verify the datasheet's specified frequency range before substitution, even when the package outline appears identical. Note also that early MRF6S27015 samples were-case 1265-09, but production parts use the same case style 1 outline.
Compliance-Informationen
RoHS-compliant per NXP product page. Not AEC-Q100 qualified - this is a base-station RF power MOSFET, not an automotive-grade part. Halogen-free status not explicitly listed in retrieved NXP materials - marked unknown per data authenticity rules.
