MRF7S19100NBR1 vs MRF6S19100HR3 Vergleich
Detaillierter Direktvergleich von MRF7S19100NBR1 von NXP Semiconductors und MRF6S19100HR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP
MRF6S19100HR3 ✓ AktivSpezifikationsvergleich
| Parameter | MRF7S19100NBR1 | MRF6S19100HR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $30,10 | $95,00 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF7S19100NBR1 | MRF6S19100HR3 |
| Device Type | RF Power MOSFET (N-Channel Enhancement-Mode Lateral) | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) |
| Frequency Band | 1.93 GHz to 1.99 GHz | — |
| Test Frequency (typical) | 1.96 GHz | — |
| Drain-Source Breakdown Voltage (V(BR)DSS, min) | 65 V | — |
| Drain Operating Voltage (VDD) | 28 V (nominal) | — |
| Quiescent Drain Current (IDQ) | 1000 mA | — |
| Output Power (Pout, average) | 29 W (single-carrier W-CDMA, 3GPP TM1 64 DPCH, 50% clipping) | — |
| Power Gain (Gp, typical) | 17.5 dB | — |
| Drain Efficiency (typical) | [DATA_NEEDED: typical drain efficiency %] | — |
| Gehäuse / Bauform | TO-270 WB-4 (TO-272 WB-4), plastic over-molded, surface mount | NI-780H-2L (Case 465-06, Style 1) |
| Configuration | Single, N-Channel | — |
| Montagestil | Surface Mount with copper ground flange (heatsink bolted) | — |
| JEDEC Terminal Code | JESD-30: R-PDFM-F4 | — |
| Terminal Finish (JESD-609) | e3 (tin-lead reflow compatible per manufacturer data) | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range C] | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range C] | — |
| RoHS-Status | compliant (per NXP product page) | Compliant (per NXP product page) |
| Lead-Free | yes | — |
| Technology | — | N-Channel LDMOS |
| Operating Frequency Range | — | 1930 MHz to 1990 MHz |
| Output Power (P1dB, Avg) | — | 22 W (N-CDMA Average) |
| Power Gain | — | 16.1 dB (typical at 1.99 GHz) |
| Drain Voltage (Vds) | — | 28 V |
| Quiescent Drain Current (Idq) | — | 900 mA (typical) |
| Montageart | — | Flanged / Screw-mount with ceramic body |
| Lead Style | — | Dual blade (HR3 suffix) |
| Operating Mode | — | Class AB (linear) |
| Target Applications | — | N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL |