MRF6S19100HR3 - 22W RF Power MOSFET 1930-1990 MHz N-CDMA | NXP
Teilenummer: MRF6S19100HR3 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $145 | $145,00 |
| 10 | $130.5 | $1.305,00 |
| 50 | $116 | $5.800,00 |
| 100 | $105 | $10.500,00 |
| 250 | $95 | $23.750,00 |
MRF6S19100HR3 Übersicht
This part is an RF power MOSFET - specifically a laterally-diffused metal-oxide semiconductor (LDMOS) transistor. RF power MOSFETs of this family occupy the final stage of a wireless base-station transmitter chain, sitting between the predriver and the antenna-combiner network. The LDMOS architecture pairs high RF gain with high ruggedness, accepting mismatched output loads without destruction - a key requirement for cellular base stations that must survive antenna disconnect events. MRF6S19100HR3 specifically occupies the W-CDMA/PCS 1900 MHz band (1930-1990 MHz), making it a workhorse driver or final-stage device in 1.9 GHz cellular infrastructure.
Key features include 22 W average output power in N-CDMA, 28 V supply operation, integrated ESD protection, and a ceramic NI-780 flanged package providing low thermal resistance to the heatsink. The dual-blade lead style (HR3 suffix) simplifies PCB-to-coaxial transition designs and reduces manufacturing cost in Doherty and push-pull amplifier topologies commonly used in modern base-station lineups.
The MRF6S19100HR3 was originally released by Freescale Semiconductor and is now manufactured by NXP Semiconductors following the 2015 acquisition. Designed to operate in Class AB for linear amplification, it remains a catalog part for legacy W-CDMA base-station repairs and for newly-designed PCS-band infrastructure where its 22 W output rating and 1.99 GHz tuning make it a low-risk RF power stage choice.
Typical applications include W-CDMA/PCS1900 base-station final-stage amplifiers, TDMA and multicarrier driver amplifiers for cellular radio, and broadband push-pull power amplifier modules. The broadband gain response also permits its use in amplifier test fixtures operating anywhere within the 1930-1990 MHz band.
When designing with this device, install it with proper RF board-to-flange torque (typically 4-6 inch-pounds) and apply thermal compound at the flange-to-heatsink interface to keep junction temperature under 200C at full CW output. Always gate-bias the device with a regulated negative voltage and follow the manufacturer-recommended sequencing to avoid thermal runaway during power-up.
This page synthesizes distributor pricing, drop-in NXP same-family alternatives, and practical thermal/RF design notes not found in the manufacturer datasheet.
Drop-in-Alternativen für MRF6S19100HR3 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF6S19100HR3 (gleiche Bauform und Footprint) – abweichend in Part Number, RoHS Status, Mounting Type, Package / Case, Operating Mode.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF6S19100HSR3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF6S19100HR5
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRF6S19090HR3
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRF7S19100NBR1
✅ Drop-In✓ Auf Lager
$30.1 / Stück
Datenblatt ansehen →MRF8S18120HR3
✅ Drop-In✓ Auf Lager
$54.2 / Stück
Datenblatt ansehen →MRF6S19100HR3 Grenzwerte & elektrische Eigenschaften
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF6S19100HR3 |
| Device Type | RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) |
| Technology | N-Channel LDMOS |
| Operating Frequency Range | 1930 MHz to 1990 MHz |
| Output Power (P1dB, Avg) | 22 W (N-CDMA Average) |
| Power Gain | 16.1 dB (typical at 1.99 GHz) |
| Drain Voltage (Vds) | 28 V |
| Quiescent Drain Current (Idq) | 900 mA (typical) |
| Gehäuse / Bauform | NI-780H-2L (Case 465-06, Style 1) |
| Montageart | Flanged / Screw-mount with ceramic body |
| Lead Style | Dual blade (HR3 suffix) |
| Operating Mode | Class AB (linear) |
| Target Applications | N-CDMA base station, TDMA, CDMA, multicarrier amplifier, PCS/cellular radio, WLL |
| RoHS-Status | Compliant (per NXP product page) |
MRF6S19100HR3 Pin-Konfiguration
| Pin 1 | DRAIN (RF OUTPUT) — Drain bias feed and RF output via integrated matching network on flange side |
| Pin 2 | GATE (RF INPUT) — Gate bias feed and RF input via blade lead; routed to negative gate-bias network |
| Pin FLANGE | SOURCE/GROUND — Metal flange serves as source RF ground and thermal mounting surface; bolted to heatsink |
MRF6S19100HR3 RF Sicherer Arbeitsbereich
Typische Anwendungen
MRF6S19100HR3 ist geeignet für 6 Anwendungs: W-CDMA/PCS1900 Base-Station Final-Stage Amplifier, TDMA and CDMA Cellular Radio Power Amplifier, Multicarrier Power Amplifier Module, Push-Pull Doherty Amplifier Final Stage, WLL (Wireless Local Loop) Base Station, RF Amplifier Test and Measurement Fixture.
W-CDMA/PCS1900 Base-Station Final-Stage Amplifier
The MRF6S19100HR3 is purpose-built for the 1930-1990 MHz PCS1900 uplink band used in W-CDMA (UMTS) base stations. Its 22 W average N-CDMA output rating per the NXP MRF6S19100H datasheet provides ample headroom for the peak-to-average ratio of W-CDMA signals (typically 3-6 dB). Designed for Class AB linear operation, the device delivers 16.1 dB typical power gain at 1.99 GHz so a single stage can drive antenna-combiner networks at full rated output. Compared to smaller plastic-packaged RF MOSFETs it dissipates more power efficiently through the NI-780 ceramic flange. Place it between the driver amplifier and the output-combiner network with a 28 V drain feed, output matching network optimized for ~50 ohm, and a regulated negative gate bias for sequencing.
Empfohlen
TDMA and CDMA Cellular Radio Power Amplifier
The MRF6S19100HR3's lateral N-channel LDMOS architecture and 22 W average output power make it a strong fit for TDMA and CDMA cellular-radio base-station amplifiers operating in the 1930-1990 MHz band. The NXP datasheet specifies suitability for TDMA, CDMA, and multicarrier amplifier applications, where linearity is critical. With 16.1 dB typical gain at 1.99 GHz the device contributes one full gain stage in the lineup, simplifying predriver chain design. Unlike smaller plastic-packaged RF MOSFETs it can handle continuous-wave multicarrier drive. Typical deployment places the MRF6S19100HR3 in the final stage after a small-signal driver amplifier, with circulator protection and a heatsink bolting the flange to a chassis for thermal dissipation.
Empfohlen
Multicarrier Power Amplifier Module
Multicarrier amplifier (MCPA) modules drive multiple carriers simultaneously through one final-stage device, demanding high linearity and broadband flat gain. The MRF6S19100HR3's N-CDMA rating at 22 W average scales well in MCPA designs where peak-output derating is essential. Per the NXP datasheet MRF6S19100H, the device's 1930-1990 MHz band covers all 12 PCS uplink carriers simultaneously when combined through a wideband combiner network. Its 16.1 dB gain at 1.99 GHz and 900 mA quiescent bias point give the MCPA designer a predictable, repeatable Class AB bias curve for digital pre-distortion loops. Mounting is via the NI-780 ceramic flange bolted to the MCPA chassis heatsink.
Empfohlen
Push-Pull Doherty Amplifier Final Stage
Doherty amplifier topology uses a main and peaking amplifier to achieve high efficiency at backed-off output levels - the dominant architecture for modern W-CDMA base stations. The MRF6S19100HR3 in push-pull configuration (two devices in balanced or quadrature-combined topologies) delivers approximately double the per-device output at the system level, reaching ~44 W average. Its NI-780 flange allows predictable mechanical mounting in Doherty combiners that combine two devices through a quadrature hybrid or 90-degree combiner. Per the NXP MRF6S19100H datasheet the device's 22W/1930-1990MHz rating is matched to typical W-CDMA Doherty final-stage design points.
Empfohlen
WLL (Wireless Local Loop) Base Station
Wireless Local Loop (WLL) systems use cellular-band RF links for last-mile broadband connectivity, and the MRF6S19100HR3's 1930-1990 MHz operating band and 22 W output power make it a natural fit for WLL base-station power amplifiers. The NXP datasheet specifically lists PCN-PCS and WLL as target applications. With 16.1 dB typical gain at 1.99 GHz, a single MRF6S19100HR3 stage can provide the full RF link budget at customer-premises WLL base stations where compact size and reliability matter. The ceramic NI-780 flange handles base-station environmental temperatures without derating.
Empfohlen
RF Amplifier Test and Measurement Fixture
Bench-top amplifier test fixtures for cellular-band applications often use the MRF6S19100HR3 as the device-under-test in gain, linearity, and ruggedness characterizations. Its 22 W rating gives enough headroom for full CW drive into calibrated test loads, and the NI-780 ceramic flange interfaces cleanly with standard test-fixture heatsinks used in production RF labs. The 16.1 dB gain at 1.99 GHz keeps loop-gain test setups stable, and the 28 V drain supply is readily available from standard test-bench power supplies. The NXP datasheet MRF6S19100H specifies comprehensive S-parameter and load-pull data that maps directly onto test-fixture simulation and correlation workflows.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF6S19100HR3 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF6S19100HSR3 | MRF6S19100HR5 | MRF6S19090HR3 | MRF7S19100NBR1 | MRF8S18120HR3 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780H-2L (Ceramic Flanged) | NI-780 (Ceramic Flanged) - same | NI-780 (Ceramic Flanged) - same | NI-780 (Ceramic Flanged) - same | NI-780 family equivalent - same footprint family | NI-780 (Ceramic Flanged) - same |
| Operating Frequency | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 1805-1880 MHz (DCS) |
| Drain Voltage (Vds) | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Lead Style | Dual Blade (HR3) | Straight Lead (HSR3) | HR5 (alternate) | Dual Blade (HR3) | NBR1 (plastic package) | Dual Blade (HR3) |
| RoHS Compliance | Yes | Yes | Yes | Yes | Yes | Yes |
Wichtigste Unterscheidungsmerkmale
- Same NI-780 ceramic flanged package as the longest-running NXP/Freescale 1.9 GHz lineup (vs. MRF7S19100NBR1)
- 22 W output specifically tuned for 1930-1990 MHz W-CDMA/PCS1900 band (vs. MRF8S18120HR3)
- Dual-blade lead style HR3 optimized for push-pull amplifier layouts (vs. MRF6S19100HSR3)
- Freescale heritage with full LDMOS ruggedness and 10:1 VSWR tolerance (vs. MRF8S19260HSR6)
Designhinweise
Estimated: at 22 W CW RF output at 1.99 GHz with 7 W DC input power (PAE ~50%) and a 28 V drain supply, internal power dissipation reaches ~14 W. The NI-780 ceramic flange's thermal resistance to a properly mounted heatsink is specified at approximately 0.5 C/W typical, giving a junction-to-heatsink temperature rise of ~7 C, well below the 200 C maximum junction temperature. Apply Wakefield 120 or equivalent thermal compound and torque mounting screws to 4-6 inch-pounds for even thermal contact without cracking the ceramic body.
Per the NXP MRF6S19100H datasheet, follow the recommended evaluation board layout closely. The drain feed network requires a 28 V bias feed with adequate RF decoupling (typically a quarter-wave stub and a 10 uF/100 nF capacitor pair) at the bias insertion point. Gate bias routing must use a separate path from the drain feed to avoid coupling; gate impedance is high and prone to oscillation if the bias line exceeds a few hundred ohms of reactance at the operating frequency. Keep RF traces short and use coplanar waveguide structures if extending beyond the evaluation board footprint.
Estimated: A common pitfall is failing to sequence the gate bias before applying drain voltage. The MRF6S19100HR3 requires Vgs to reach the operating bias point (typically -2 to -5 V then ramped to Idq point) before Vds comes up. Hot-switching the drain supply destroys the gate oxide. Add a sequencing controller or use the NXP evaluation board's bias-tee design. Also verify the load VSWR stays within the 10:1 ruggedness envelope - exceeding this can cause catastrophic device failure even though the MRF6S19100HR3 is rated for high load mismatch tolerance.
Per the NXP datasheet, the device exhibits stable gain over the full 1930-1990 MHz band when the input and output networks are tuned to a nominal 50 ohm reference. For broadband multicarrier amplifier designs, keep input/output return loss below -10 dB across the operating band to maintain gain flatness. Use load-pull characterization (or the application note data) to design output networks that account for the device's varying optimum load impedance at fundamental and harmonic frequencies. Stability over -40C to +85C must be verified with a network analyzer connected to the bias network at temperature extremes.
Compliance-Informationen
RoHS compliant per NXP product page. Originally released by Freescale Semiconductor; now manufactured by NXP following the 2015 acquisition. Halogen-free status for ceramic RF packages not separately disclosed by NXP - default 'unknown'.
