MRF7S19100NBR1 vs MRF7S19170HSR3 Vergleich
Detaillierter Direktvergleich von MRF7S19100NBR1 von NXP Semiconductors und MRF7S19170HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF7S19170HSR3 - 50W 1.99GHz LDMOS RF Power Transistor | NXP
MRF7S19170HSR3 ✓ AktivSpezifikationsvergleich
| Parameter | MRF7S19100NBR1 | MRF7S19170HSR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $30,10 | $99,40 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF7S19100NBR1 | — |
| Device Type | RF Power MOSFET (N-Channel Enhancement-Mode Lateral) | — |
| Frequency Band | 1.93 GHz to 1.99 GHz | 1930-1990 MHz (US PCS / UMTS Band 1 / DCS-1900) |
| Test Frequency (typical) | 1.96 GHz | — |
| Drain-Source Breakdown Voltage (V(BR)DSS, min) | 65 V | — |
| Drain Operating Voltage (VDD) | 28 V (nominal) | — |
| Quiescent Drain Current (IDQ) | 1000 mA | — |
| Output Power (Pout, average) | 29 W (single-carrier W-CDMA, 3GPP TM1 64 DPCH, 50% clipping) | — |
| Power Gain (Gp, typical) | 17.5 dB | — |
| Drain Efficiency (typical) | [DATA_NEEDED: typical drain efficiency %] | — |
| Gehäuse / Bauform | TO-270 WB-4 (TO-272 WB-4), plastic over-molded, surface mount | NI-880S (ceramic flange, bolt-down) |
| Configuration | Single, N-Channel | — |
| Montagestil | Surface Mount with copper ground flange (heatsink bolted) | — |
| JEDEC Terminal Code | JESD-30: R-PDFM-F4 | — |
| Terminal Finish (JESD-609) | e3 (tin-lead reflow compatible per manufacturer data) | — |
| Betriebstemperaturbereich | [DATA_NEEDED: operating temperature range C] | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range C] | — |
| RoHS-Status | compliant (per NXP product page) | Compliant (per NXP product page) |
| Lead-Free | yes | — |
| Part Status (Rochester) | — | Active - Rochester Electronics LLC authorized stock |
| Transistortyp | — | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Technology | — | HV7 LDMOS |
| Test Frequency | — | 1.99 GHz |
| Drain-Source Voltage (Max) | — | 65 V |
| Operating Drain Voltage | — | 28 V (typical) |
| Test Drain Current | — | 1.4 A |
| Output Power (Avg) | — | 50 W (W-CDMA) |
| Power Gain (typ) | — | 17.2 dB |
| Montageart | — | Chassis / Heatsink Mount (flange) |
| Operating Mode | — | Class AB / Class C |
| Modulation Supported | — | CDMA, W-CDMA, multi-carrier GSM, EDGE |
| Lead Finish | — | Ni-Au (lead-free compatible) |