MRF7S19100NBR1 vs MRF7S19170HSR3 Comparación
Comparación detallada lado a lado de MRF7S19100NBR1 por NXP Semiconductors y MRF7S19170HSR3 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF7S19170HSR3 - 50W 1.99GHz LDMOS RF Power Transistor | NXP
MRF7S19170HSR3 ✓ ActivoComparación de especificaciones
| Parámetro | MRF7S19100NBR1 | MRF7S19170HSR3 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $30,10 | $99,40 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Part Number | MRF7S19100NBR1 | — |
| Device Type | RF Power MOSFET (N-Channel Enhancement-Mode Lateral) | — |
| Frequency Band | 1.93 GHz to 1.99 GHz | 1930-1990 MHz (US PCS / UMTS Band 1 / DCS-1900) |
| Test Frequency (typical) | 1.96 GHz | — |
| Drain-Source Breakdown Voltage (V(BR)DSS, min) | 65 V | — |
| Drain Operating Voltage (VDD) | 28 V (nominal) | — |
| Quiescent Drain Current (IDQ) | 1000 mA | — |
| Output Power (Pout, average) | 29 W (single-carrier W-CDMA, 3GPP TM1 64 DPCH, 50% clipping) | — |
| Power Gain (Gp, typical) | 17.5 dB | — |
| Drain Efficiency (typical) | [DATA_NEEDED: typical drain efficiency %] | — |
| Encapsulado / Carcasa | TO-270 WB-4 (TO-272 WB-4), plastic over-molded, surface mount | NI-880S (ceramic flange, bolt-down) |
| Configuration | Single, N-Channel | — |
| Estilo de montaje | Surface Mount with copper ground flange (heatsink bolted) | — |
| JEDEC Terminal Code | JESD-30: R-PDFM-F4 | — |
| Terminal Finish (JESD-609) | e3 (tin-lead reflow compatible per manufacturer data) | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range C] | — |
| Storage Temperature Range | [DATA_NEEDED: storage temperature range C] | — |
| Estado RoHS | compliant (per NXP product page) | Compliant (per NXP product page) |
| Lead-Free | yes | — |
| Part Status (Rochester) | — | Active - Rochester Electronics LLC authorized stock |
| Tipo de transistor | — | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Technology | — | HV7 LDMOS |
| Test Frequency | — | 1.99 GHz |
| Drain-Source Voltage (Max) | — | 65 V |
| Operating Drain Voltage | — | 28 V (typical) |
| Test Drain Current | — | 1.4 A |
| Output Power (Avg) | — | 50 W (W-CDMA) |
| Power Gain (typ) | — | 17.2 dB |
| Tipo de montaje | — | Chassis / Heatsink Mount (flange) |
| Operating Mode | — | Class AB / Class C |
| Modulation Supported | — | CDMA, W-CDMA, multi-carrier GSM, EDGE |
| Lead Finish | — | Ni-Au (lead-free compatible) |