MRF8P20161HSR3 vs MRF8P20160HSR3 Vergleich
Detaillierter Direktvergleich von MRF8P20161HSR3 von NXP Semiconductors und MRF8P20160HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MRF8P20161HSR3 | MRF8P20160HSR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $99,50 | $64,80 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Transistortyp | N-Channel Lateral MOSFET (RF Power) | N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | 1880 MHz to 2025 MHz | — |
| Drain Supply Voltage (Vdd) | 28 V | — |
| Average Output Power | 37 W (W-CDMA) | — |
| Small-Signal Gain | 16.4 dB at 1.92 GHz | — |
| Quiescent Drain Current (Idq) | 550 mA | — |
| Test Frequency | 1.92 GHz | 1.92 GHz |
| Operating Class | Class AB or Class C | Class AB or Class C |
| Gehäuse | NI-780S-4 (NI-780HS-4) ceramic air-cavity, surface mount | — |
| Montageart | Surface mount with screw-down flange | — |
| Polarity / Channel | N-Channel enhancement-mode lateral | — |
| Modulation Support | W-CDMA, LTE, multi-carrier GSM | — |
| Application | CDMA / cellular base station RF power amplifier | W-CDMA / LTE / TD-SCDMA base-station PA |
| RoHS-Status | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| Operating Mode | Enhancement mode | — |
| Part Number | — | MRF8P20160HSR3 |
| Technology | — | HV8 lateral RF MOSFET |
| Frequency Band | — | 1880 MHz to 2025 MHz |
| Output Power (Average) | — | 37 W (Single-Carrier W-CDMA) |
| Drain Supply Voltage (VDD) | — | 28 Vdc |
| Quiescent Drain Current (IDQA) | — | 550 mA |
| Power Gain (Typ) | — | 16.5 dB at 1.92 GHz |
| Gehäuse / Bauform | — | NI-780S-4 (ceramic flanged) |
| Montagestil | — | Screw-down flange (through-hole) |
| Junction Temperature (Max) | — | 200 C (S-prefix sample-tested) |
| Lead Finish | — | [DATA_NEEDED: lead finish] |