MRF8P20161HSR3 vs MRF8P20160HSR3 Сравнение
Подробное сравнение бок о бок MRF8P20161HSR3 от NXP Semiconductors и MRF8P20160HSR3 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MRF8P20160HSR3 - 37W RF Power MOSFET 1880-2025 MHz | NXP
MRF8P20160HSR3 ✓ АктивенСравнение характеристик
| Параметр | MRF8P20161HSR3 | MRF8P20160HSR3 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $99,50 | $64,80 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors (formerly Freescale) |
| Тип транзистора | N-Channel Lateral MOSFET (RF Power) | N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Range | 1880 MHz to 2025 MHz | — |
| Drain Supply Voltage (Vdd) | 28 V | — |
| Average Output Power | 37 W (W-CDMA) | — |
| Small-Signal Gain | 16.4 dB at 1.92 GHz | — |
| Quiescent Drain Current (Idq) | 550 mA | — |
| Test Frequency | 1.92 GHz | 1.92 GHz |
| Operating Class | Class AB or Class C | Class AB or Class C |
| Корпус | NI-780S-4 (NI-780HS-4) ceramic air-cavity, surface mount | — |
| Тип монтажа | Surface mount with screw-down flange | — |
| Polarity / Channel | N-Channel enhancement-mode lateral | — |
| Modulation Support | W-CDMA, LTE, multi-carrier GSM | — |
| Application | CDMA / cellular base station RF power amplifier | W-CDMA / LTE / TD-SCDMA base-station PA |
| Статус RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: RoHS status] |
| Operating Mode | Enhancement mode | — |
| Part Number | — | MRF8P20160HSR3 |
| Technology | — | HV8 lateral RF MOSFET |
| Frequency Band | — | 1880 MHz to 2025 MHz |
| Output Power (Average) | — | 37 W (Single-Carrier W-CDMA) |
| Drain Supply Voltage (VDD) | — | 28 Vdc |
| Quiescent Drain Current (IDQA) | — | 550 mA |
| Power Gain (Typ) | — | 16.5 dB at 1.92 GHz |
| Корпус / Типоразмер | — | NI-780S-4 (ceramic flanged) |
| Способ монтажа | — | Screw-down flange (through-hole) |
| Junction Temperature (Max) | — | 200 C (S-prefix sample-tested) |
| Lead Finish | — | [DATA_NEEDED: lead finish] |