MRF8P23080HSR3 vs MRF8P23080HSR5 Vergleich
Detaillierter Direktvergleich von MRF8P23080HSR3 von NXP Semiconductors und MRF8P23080HSR5 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF8P23080HSR3 - 80W 2300-2400MHz LDMOS RF Power MOSFET | NXP
MRF8P23080HSR3 ✓ Aktiv
Spezifikationsvergleich
| Parameter | MRF8P23080HSR3 | MRF8P23080HSR5 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $65,10 | $55,80 |
| Transistortyp | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET | — |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors |
| Drain-Source Voltage (V DSS) | 65 V | — |
| Drain Bias Voltage (V DD) | 28 V (typical operating) | — |
| Test Quiescent Current (I DQ) | 280 mA | — |
| Frequency Range | 2300 MHz to 2620 MHz | — |
| Center Test Frequency | 2.3 GHz | — |
| Typical Power Gain | 14.6 dB | — |
| Average Output Power (P3dB-class, single-carrier W-CDMA) | 16 W | — |
| Gehäuse / Bauform | NI-780S-4L (air-cavity ceramic, flange-mount) | NI-780S-4L |
| Montageart | Chassis / flange-mount, bolt-down with screws | Chassis / Flange Mount |
| Maximum Operating Temperature (Tj) | 225 C (junction) | — |
| Configuration | Common source, 2 elements | — |
| Lead-Free / RoHS | Lead-Free Status confirmed per DigiKey listing | — |
| Typical Modulation Formats | W-CDMA, LTE, TD-LTE; Class AB and Class C | — |
| Suggested Topology | Doherty final stage (single-carrier W-CDMA) | — |
| Product Type | — | RF Power MOSFET (Lateral N-Channel) |
| Series | — | Airfast HV8 |
| Frequency Band | — | 2300 to 2400 MHz |
| Test Frequency | — | 2.3 GHz |
| Target Waveforms | — | W-CDMA, LTE |
| Average Output Power | — | 16 W |
| Peak Output Power | — | 80 W |
| Power Gain (typical) | — | 14.6 dB at 2.3 GHz |
| Drain-Source Voltage (Vds) Test Condition | — | 28 V |
| Drain Current (Id) Test Condition | — | 280 mA |
| Operating Mode | — | Class AB |
| Technology | — | Laterally Diffused MOS (LDMOS) |
| Channel Polarity | — | N-Channel |
| Compliance | — | RoHS compliant per NXP product page |