MRF8P23080HSR3 vs MRF8P23080HSR5 Comparación
Comparación detallada lado a lado de MRF8P23080HSR3 por NXP Semiconductors y MRF8P23080HSR5 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MRF8P23080HSR3 - 80W 2300-2400MHz LDMOS RF Power MOSFET | NXP
MRF8P23080HSR3 ✓ Activo
Comparación de especificaciones
| Parámetro | MRF8P23080HSR3 | MRF8P23080HSR5 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $65,10 | $55,80 |
| Tipo de transistor | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET | — |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | NXP Semiconductors |
| Drain-Source Voltage (V DSS) | 65 V | — |
| Drain Bias Voltage (V DD) | 28 V (typical operating) | — |
| Test Quiescent Current (I DQ) | 280 mA | — |
| Frequency Range | 2300 MHz to 2620 MHz | — |
| Center Test Frequency | 2.3 GHz | — |
| Typical Power Gain | 14.6 dB | — |
| Average Output Power (P3dB-class, single-carrier W-CDMA) | 16 W | — |
| Encapsulado / Carcasa | NI-780S-4L (air-cavity ceramic, flange-mount) | NI-780S-4L |
| Tipo de montaje | Chassis / flange-mount, bolt-down with screws | Chassis / Flange Mount |
| Maximum Operating Temperature (Tj) | 225 C (junction) | — |
| Configuration | Common source, 2 elements | — |
| Lead-Free / RoHS | Lead-Free Status confirmed per DigiKey listing | — |
| Typical Modulation Formats | W-CDMA, LTE, TD-LTE; Class AB and Class C | — |
| Suggested Topology | Doherty final stage (single-carrier W-CDMA) | — |
| Product Type | — | RF Power MOSFET (Lateral N-Channel) |
| Series | — | Airfast HV8 |
| Frequency Band | — | 2300 to 2400 MHz |
| Test Frequency | — | 2.3 GHz |
| Target Waveforms | — | W-CDMA, LTE |
| Average Output Power | — | 16 W |
| Peak Output Power | — | 80 W |
| Power Gain (typical) | — | 14.6 dB at 2.3 GHz |
| Drain-Source Voltage (Vds) Test Condition | — | 28 V |
| Drain Current (Id) Test Condition | — | 280 mA |
| Operating Mode | — | Class AB |
| Technology | — | Laterally Diffused MOS (LDMOS) |
| Channel Polarity | — | N-Channel |
| Compliance | — | RoHS compliant per NXP product page |