MRF8S21100HSR3 vs MRF8S21120HSR3 Vergleich

Detaillierter Direktvergleich von MRF8S21100HSR3 von NXP Semiconductors und MRF8S21120HSR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

NXP Semiconductors
MRF8S21100HSR3 MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP

MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP

MRF8S21100HSR3 ✓ Aktiv
NXP Semiconductors
MRF8S21120HSR3 MRF8S21120HSR3 - 28W RF Power MOSFET 2110-2170 MHz | NXP

MRF8S21120HSR3 - 28W RF Power MOSFET 2110-2170 MHz | NXP

MRF8S21120HSR3 ✓ Aktiv

Spezifikationsvergleich

Parameter MRF8S21100HSR3 MRF8S21120HSR3
Marke NXP Semiconductors NXP Semiconductors
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus Aktiv Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $65,00 $59,95
Transistortyp N-Channel Enhancement-Mode Lateral MOSFET —
Technology LDMOS (Laterally Diffused MOSFET) —
Drain-Source Voltage (V(BR)DSS) 65 V —
Operating Drain Voltage (VDD) 28 V nominal —
Frequency Range 2110 MHz to 2170 MHz 2110-2170 MHz
Test Frequency 2.14 GHz —
Output Power (CW, typical) 100 W —
Average Output Power (W-CDMA) 24 W —
Power Gain (typ) 18.3 dB at 2.14 GHz —
Drain Current (ID, max) [DATA_NEEDED: max ID rating] —
Gehäuse / Bauform NI-780S (Case 465A-06), 3-pin ceramic flange —
Configuration Single, push-pull N/A —
Montageart Chassis / flange mount, screw-down —
Operating Class Class AB or Class C —
Application W-CDMA, LTE base-station power amplifiers —
RoHS-Status Compliant (per NXP product family) RoHS compliant
Lead-Free Yes Yes
Manufacturer — NXP Semiconductors (formerly Freescale)
Part Number — MRF8S21120HSR3
Device Type — N-Channel Enhancement-Mode Lateral RF Power MOSFET
Output Power (P1dB / average) — 28 W average, W-CDMA / LTE
Drain-Source Breakdown Voltage V(BR)DSS — 65 V
Operating Drain Voltage — 28 V
Power Gain (Typical) — 17.6 dB at 2.17 GHz
Drain Efficiency (Typical) — [DATA_NEEDED: datasheet efficiency figure]
Operating Mode — Class AB / Class C
Package Type — NI-780HS (ceramic flange)
Case Mounting — Source on case (flange grounding)
Anzahl der Pins — 2-pin (Gate, Drain)
Montagestil — Through-hole / bolt-down flange
MSL-Level — 1 (unlimited)

Datenblätter & Ressourcen

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