MRF8S21100HSR3 - 100W RF Power MOSFET, 2.11-2.17 GHz | NXP
Teilenummer: MRF8S21100HSR3 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $95 | $95,00 |
| 10 | $86.5 | $865,00 |
| 50 | $78.2 | $3.910,00 |
| 100 | $71.4 | $7.140,00 |
| 500 | $65 | $32.500,00 |
MRF8S21100HSR3 Übersicht
An RF power MOSFET is a lateral-diffusion metal-oxide-semiconductor transistor built on a high-resistivity silicon substrate with a low-parasitic leadless ceramic package optimized for RF matching and thermal dissipation. Within the broader hierarchy, it sits below RF transistor -> power transistor -> discrete semiconductor, with N-channel enhancement-mode operation providing fail-safe bias behavior at gate threshold.
Key features include 18.3 dB typical power gain at 2.14 GHz, 65 V drain-source breakdown voltage (V(BR)DSS), and operation from a 28 V nominal supply. The device is characterized with a series-equivalent large-signal model to simplify Doherty and single-ended PA circuit simulation. Built-in ESD protection and integrated gate-source clamping diodes simplify board design.
Architecturally, the MRF8S21100HSR3 uses laterally diffused metal-oxide-semiconductor (LDMOS) technology with optimized source-via grounding through the ceramic package flange. This geometry minimizes common-source inductance, which is critical at 2.1 GHz where even fractional-nH parasitic losses degrade gain and PAE. Thermal performance is delivered through the NI-780S ceramic flange that bolts directly to the heatsink.
Typical applications include W-CDMA/LTE macro-cell base-station PAs, Doherty final-stage amplifiers, and 2110-2170 MHz band UMTS/3GPP signal-chain transmit sections where linear efficiency is required. The wide bandwidth also makes it suitable for driver stages in multi-band radio units.
When designing with this part, ensure the input and output matching networks are designed for the 2110-2170 MHz band with low-loss substrate; gate bias should be set to Class AB (approximately 2.7 V) for W-CDMA linearity. The flange temperature must remain below the maximum rating during continuous W-CDMA operation.
This page synthesizes NXP official datasheet parameters, distributor pricing as of 2026-10-16, drop-in alternatives within the same NI-780S footprint, and practical design notes not found in the manufacturer datasheet alone.
Drop-in-Alternativen für MRF8S21100HSR3 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit MRF8S21100HSR3 (gleiche Bauform und Footprint) – abweichend in Mounting Type, Transistor Type, Frequency Range, Manufacturer, Operating Mode.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
MRF8S21100HR3
✅ Drop-In📋 Referenzalternative (nicht im Katalog)
MRF8S21120HSR3
✅ Drop-In✓ Auf Lager
$59.95 / Stück
Datenblatt ansehen →MRF8S18120HSR3
✅ Drop-In✓ Auf Lager
$65 / Stück
Datenblatt ansehen →MRF8S21200HSR3
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
MRF8P26080HSR3
✅ Drop-In✓ Auf Lager
$99.85 / Stück
Datenblatt ansehen →MRF8S21100HSR3 Grenzwerte & elektrische Eigenschaften
| Transistortyp | N-Channel Enhancement-Mode Lateral MOSFET |
| Technology | LDMOS (Laterally Diffused MOSFET) |
| Drain-Source Voltage (V(BR)DSS) | 65 V |
| Operating Drain Voltage (VDD) | 28 V nominal |
| Frequency Range | 2110 MHz to 2170 MHz |
| Test Frequency | 2.14 GHz |
| Output Power (CW, typical) | 100 W |
| Average Output Power (W-CDMA) | 24 W |
| Power Gain (typ) | 18.3 dB at 2.14 GHz |
| Gehäuse / Bauform | NI-780S (Case 465A-06), 3-pin ceramic flange |
| Configuration | Single, push-pull N/A |
| Montageart | Chassis / flange mount, screw-down |
| Operating Class | Class AB or Class C |
| Application | W-CDMA, LTE base-station power amplifiers |
| RoHS-Status | Compliant (per NXP product family) |
| Lead-Free | Yes |
MRF8S21100HSR3 Pin-Konfiguration
| Pin 1 | Gate — RF input / gate bias |
| Pin 2 | Drain — RF output / drain supply (VDD) |
| Pin 3 | Source — Source / flange ground (chassis-mounted) |
Sicherer Arbeitsbereich (estimated from datasheet ratings)
Typische Anwendungen
MRF8S21100HSR3 ist geeignet für 6 Anwendungs: W-CDMA Macro-Cell Base Station PA, LTE Band 1 Doherty Final Stage, UMTS Band 1 Driver Stage, Multi-Band Radio Unit Final PA, Public-Safety / Private LTE PA, 3GPP Test Equipment Amplifier.
W-CDMA Macro-Cell Base Station PA
The MRF8S21100HSR3 is purpose-built for 2.11-2.17 GHz W-CDMA macro-cell base-station final-stage power amplifiers, where its 24 W average W-CDMA output capability directly translates into the headline Pout of a sector antenna. The 18.3 dB typical gain at 2.14 GHz eliminates the need for an intermediate driver stage, simplifying the PA chain. The 100% PAR-tested characterization guarantees linear performance under 3GPP test models without additional design margin, reducing per-board qualification cost. The 28 V LDMOS supply rail matches standard macro-cell BTS rectifier outputs, and the 65 V V(BR)DSS provides robust VSWR tolerance for outdoor tower-top installations.
Empfohlen
LTE Band 1 Doherty Final Stage
In a Doherty final-stage architecture for LTE Band 1 (2110-2170 MHz), the MRF8S21100HSR3 serves as either the carrier (main) amplifier or peaking amplifier. Its 18.3 dB gain and Class AB / Class C dual-mode capability allow the same part to populate both amplifier positions in the Doherty pair, simplifying BOM and inventory. NXP provides a series-equivalent large-signal model that enables accurate Doherty load-line simulation prior to PCB fabrication. The 28 V rail and 65 V breakdown give ample headroom for peaking-stage voltage swings at the load-modulation peak, preserving linearity at 3GPP TM3.1 ACLR targets while maintaining high backoff efficiency.
Empfohlen
UMTS Band 1 Driver Stage
Used as a driver stage feeding a higher-power final amplifier in UMTS Band 1 radio units, the MRF8S21100HSR3 provides 18.3 dB of small-signal gain at 2.14 GHz with excellent linearity. The ceramic NI-780S flange bolts directly to the system heatsink, supporting continuous W-CDMA operation at 24 W average without thermal runaway. Because the part shares the NI-780S footprint with other family members, the same PCB layout can be reused across 100 W and 120 W Pout variants, allowing a single board design to serve multiple product tiers.
Empfohlen
Multi-Band Radio Unit Final PA
In a multi-band remote radio unit (RRU) supporting 2.11-2.17 GHz along with adjacent bands, the MRF8S21100HSR3 occupies the Band 1 PA slot with the same mechanical and thermal interface as other NI-780S family devices on different bands. The standard 28 V rail simplifies shared power-conversion design across the radio. Its lateral N-channel enhancement-mode topology with integrated ESD protection reduces external component count on the PA board, supporting the aggressive size-and-cost targets of small-cell and AAS deployments.
Empfohlen
Public-Safety / Private LTE PA
Public-safety LTE networks operating in Band 14 or shared Band 1 spectrum benefit from the MRF8S21100HSR3's 24 W W-CDMA/LTE average output combined with rugged 65 V breakdown, which is essential for VSWR-mismatch tolerance in mobile vehicular and fixed-installation scenarios. The 28 V supply rail accepts standard vehicle 24 V busses after filtering, enabling rapid deployment in emergency-response vehicle repeaters and portable base stations. The 100% PAR-tested characterization ensures that critical public-safety voice and data links meet mission-critical availability targets.
Empfohlen
3GPP Test Equipment Amplifier
For laboratory-grade 3GPP test equipment such as device emulators and conformance-test PA chains, the MRF8S21100HSR3 provides a known-good, datasheet-characterized amplification path at 2.11-2.17 MHz. The NXP-supplied series-equivalent large-signal model and S-parameter files enable full simulation of the test bed before hardware is committed, accelerating instrument development. The 100 W CW capability supports the high-peak test signals needed for receiver-desensitization and blocking-test setups, while the 24 W W-CDMA average rating matches typical device-under-test maximum input drive levels.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für MRF8S21100HSR3 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | MRF8S21100HR3 | MRF8S21120HSR3 | MRF8S18120HSR3 | MRF8S21200HSR3 | MRF8P26080HSR3 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780S (Case 465A-06) | NI-780S (Case 465A-06) - same | NI-780S (Case 465A-06) - same | NI-780S (Case 465A-06) - same | NI-780S (Case 465A-06) - same | NI-780S (Case 465A-06) - same |
| Frequency Range | 2110-2170 MHz | 2110-2170 MHz | 2110-2170 MHz | 1805-1880 MHz | 2110-2170 MHz | 2600-2690 MHz |
| Peak Output Power (CW) | 100 W | 100 W | 120 W | 120 W | 200 W | 80 W |
| Drain Voltage (VDD) | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| V(BR)DSS | 65 V | 65 V | 65 V | 65 V | 65 V | 65 V |
Wichtigste Unterscheidungsmerkmale
- Hundred-percent PAR-tested characterization (vs. MRF8S21100HR3)
- Higher output-power variant available in same footprint (vs. MRF8S21120HSR3)
- 100 W-class with W-CDMA-specific characterization (vs. MRF8P26080HSR3)
Designhinweise
Estimated: at 28 V VDD, 24 W W-CDMA average output, and ~38% PAE, internal dissipation reaches approximately (Pout/PAE - Pout) ~ 39 W during W-CDMA. The NI-780S ceramic flange must be bolted to a heatsink sized to keep flange temperature below the maximum rating. Apply uniform thermal compound and follow NXP mounting torque specifications (typically 1.0-1.2 N-m for M3 hardware) to avoid localized thermal resistance.
Estimated: at 2.14 GHz, every 1 nH of common-source inductance reduces gain by approximately 0.5 dB and degrades stability. Use multiple low-inductance source vias directly under the package flange and keep gate/drain leads to microstrip traces as short as possible. Use Rogers RO4350B or RO4003C substrate (not FR-4) for predictable RF performance above 2 GHz; the dielectric constant tolerance of FR-4 at 2.1 GHz typically shifts matching by more than 10%.
Do not exceed 65 V drain transient at any time, including during output VSWR mismatch events. Always include a gate-series resistor (typically 5-10 ohm) for RF stability and to dampen parametric oscillations at high gain. Bias sequencing is not strictly required for enhancement-mode LDMOS (unlike depletion-mode GaN), but a controlled gate ramp prevents in-rush transients on the supply rail.
Compliance-Informationen
RoHS and lead-free compliance per NXP MRF8S21100 family product page; halogen-free status not specifically published for the ceramic NI-780S package. AEC-Q100 not applicable - this is a base-station / infrastructure RF power MOSFET, not an automotive-grade part.
