MRF9030MBR1 vs MRF6S9045NBR1 Vergleich
Detaillierter Direktvergleich von MRF9030MBR1 von NXP Semiconductors und MRF6S9045NBR1 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MRF6S9045NBR1 - 880MHz 10W RF Power MOSFET | NXP Semiconductors
MRF6S9045NBR1 ✓ AktivSpezifikationsvergleich
| Parameter | MRF9030MBR1 | MRF6S9045NBR1 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $25,80 | $12,10 |
| Manufacturer | NXP Semiconductors (formerly Freescale / Motorola) | NXP Semiconductors (formerly Freescale) |
| Part Family | RF Sub-Micron MOSFET Line | — |
| Transistortyp | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Configuration | Single, common-source | Single, common-source |
| Typical Output Power | 30 W at 945 MHz | — |
| Operating Frequency Range | DC to 1000 MHz | — |
| Power Gain (typical) | 20 dB | — |
| Drain-Source Voltage (Vds) Rating | 26 V | — |
| Typical Bias Current | 250 mA | — |
| Montageart | Surface Mount (flanged ceramic) | Surface Mount (flange/ceramic) |
| Gehäuse | TO-272-2 (ceramic, 2-lead flanged) | — |
| Maximum Dissipation (per Partstack) | 139 W | — |
| Feuchtigkeitsempfindlichkeitsgrad (MSL) | 3 | — |
| Application | Broadband RF power amplifier / large-signal common-source amplifier | — |
| Polarity / Channel Mode | N-Channel, enhancement-mode | — |
| RoHS-Status | [DATA_NEEDED: RoHS compliance status from manufacturer page] | Compliant |
| Technology | — | Lateral DMOS, RF power |
| Operating Frequency | — | Up to 1000 MHz (typical 880 MHz) |
| Drain-Source Voltage (V DSS min) | — | 68 V |
| Typical Operating Drain Voltage (V DD) | — | 28 V |
| Quiescent Drain Current (I DQ) | — | 350 mA |
| Output Power (P out avg) | — | 10 W |
| Power Gain (G ps) | — | 22.7 dB at 880 MHz |
| Drain Efficiency (η D) | — | [DATA_NEEDED: drain efficiency %] |
| Maximum Power Dissipation (P D max) | — | 175 W |
| Gehäuse / Bauform | — | NI-880H-2L (TO-272-2 variant) |
| Betriebstemperatur | — | [DATA_NEEDED: junction/storage temperature range] |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |
| Lead-Free | — | Yes |