MRF9030MBR1 vs MRF6S9045NBR1 Сравнение
Подробное сравнение бок о бок MRF9030MBR1 от NXP Semiconductors и MRF6S9045NBR1 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
NXP Semiconductors
MRF9030MBR1 - 30W, 945MHz RF Power MOSFET | NXP / Freescale
MRF9030MBR1 ✓ АктивенNXP Semiconductors
MRF6S9045NBR1 - 880MHz 10W RF Power MOSFET | NXP Semiconductors
MRF6S9045NBR1 ✓ АктивенСравнение характеристик
| Параметр | MRF9030MBR1 | MRF6S9045NBR1 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $25,80 | $12,10 |
| Manufacturer | NXP Semiconductors (formerly Freescale / Motorola) | NXP Semiconductors (formerly Freescale) |
| Part Family | RF Sub-Micron MOSFET Line | — |
| Тип транзистора | N-Channel Enhancement-Mode Lateral MOSFET | N-Channel Enhancement-Mode Lateral MOSFET |
| Configuration | Single, common-source | Single, common-source |
| Typical Output Power | 30 W at 945 MHz | — |
| Operating Frequency Range | DC to 1000 MHz | — |
| Power Gain (typical) | 20 dB | — |
| Drain-Source Voltage (Vds) Rating | 26 V | — |
| Typical Bias Current | 250 mA | — |
| Тип монтажа | Surface Mount (flanged ceramic) | Surface Mount (flange/ceramic) |
| Корпус | TO-272-2 (ceramic, 2-lead flanged) | — |
| Maximum Dissipation (per Partstack) | 139 W | — |
| Уровень чувствительности к влаге (MSL) | 3 | — |
| Application | Broadband RF power amplifier / large-signal common-source amplifier | — |
| Polarity / Channel Mode | N-Channel, enhancement-mode | — |
| Статус RoHS | [DATA_NEEDED: RoHS compliance status from manufacturer page] | Compliant |
| Technology | — | Lateral DMOS, RF power |
| Operating Frequency | — | Up to 1000 MHz (typical 880 MHz) |
| Drain-Source Voltage (V DSS min) | — | 68 V |
| Typical Operating Drain Voltage (V DD) | — | 28 V |
| Quiescent Drain Current (I DQ) | — | 350 mA |
| Output Power (P out avg) | — | 10 W |
| Power Gain (G ps) | — | 22.7 dB at 880 MHz |
| Drain Efficiency (η D) | — | [DATA_NEEDED: drain efficiency %] |
| Maximum Power Dissipation (P D max) | — | 175 W |
| Корпус / Типоразмер | — | NI-880H-2L (TO-272-2 variant) |
| Рабочая температура | — | [DATA_NEEDED: junction/storage temperature range] |
| Уровень MSL | — | [DATA_NEEDED: MSL rating] |
| Lead-Free | — | Yes |