MRFE6S9160HR3 vs MRF6S9160HR3 Vergleich
Detaillierter Direktvergleich von MRFE6S9160HR3 von NXP Semiconductors und MRF6S9160HR3 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MRFE6S9160HR3 | MRF6S9160HR3 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $25,20 | $510,00 |
| Manufacturer | NXP Semiconductors | Freescale Semiconductor (now NXP Semiconductors) |
| Transistortyp | N-Channel Enhancement-Mode Lateral MOSFET | — |
| Technology | HV6E lateral MOSFET (LDMOS-like) | RF Power MOSFET (lateral N-channel, enhancement mode) |
| Drain-Source Voltage (V DSS) | 70 V (max) | — |
| Drain Current (continuous) | [DATA_NEEDED: typical drain current at TC=25C] | — |
| Operating Frequency Range | 865 MHz to 960 MHz | [DATA_NEEDED: full datasheet frequency range] |
| Test Frequency | 880 MHz | — |
| Drain Supply Voltage (V DD) | 28 V (typical) | — |
| Output Power (Average) | 35 W (single-carrier N-CDMA, 880 MHz) | — |
| Output Power (PEP) | [DATA_NEEDED: PEP at specified conditions] | — |
| Power Gain (G ps / G p) | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 32.4% (typical, N-CDMA, 880 MHz) | — |
| Gehäuse / Bauform | NI-780H-2L (ceramic/metal air-cavity flange-mount) | NI-780H-2L (CASE 465-06, STYLE 1), ceramic, flanged |
| Montageart | Chassis / Flange mount (through-hole RF leads) | Chassis/Surface flange mount (screw-down) |
| Betriebstemperaturbereich | -40C to +150C (junction) | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Thermal Resistance (R thJC) | [DATA_NEEDED: thermal resistance junction-to-case] | — |
| Input Match | Internally matched input (broadband) | — |
| RoHS-Status | Compliant | unknown |
| Lead-Free | Yes | — |
| MSL-Level | Not applicable (non-SMD air-cavity package) | — |
| Frequency Band | — | 880 MHz (single-band cellular UHF) |
| Drain-Source Voltage (VDSS) | — | [DATA_NEEDED: VDSS rating] |
| Supply Voltage (VDD) | — | 28 V (typical operation) |
| Average Output Power (Pout avg) | — | 35 W (N-CDMA, 880 MHz) |
| Peak Output Power (Pout peak) | — | [DATA_NEEDED: peak Pout rating] |
| Power Gain (Gp) | — | 20.9 dB (typical at 880 MHz) |
| Drain Efficiency (ηD) | — | [DATA_NEEDED: efficiency at rated Pout] |
| Quiescent Bias Current (IDQ) | — | 1.2 A (typical) |
| Configuration | — | Single (single-ended, common-source) |
| Operating Mode | — | Enhancement mode, Class AB |
| Test Signal | — | Single N-CDMA |
| Maximum Power Dissipation | — | 565 W (absolute, per Partstack parametric record) |
| Lead Finish | — | [DATA_NEEDED: lead finish] |