MRFE6S9160HR3 vs MRF6S9160HR3 对比
详细并排对比 MRFE6S9160HR3 出自 NXP Semiconductors 和 MRF6S9160HR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | MRFE6S9160HR3 | MRF6S9160HR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $25.20 | $510.00 |
| Manufacturer | NXP Semiconductors | Freescale Semiconductor (now NXP Semiconductors) |
| 晶体管类型 | N-Channel Enhancement-Mode Lateral MOSFET | — |
| Technology | HV6E lateral MOSFET (LDMOS-like) | RF Power MOSFET (lateral N-channel, enhancement mode) |
| Drain-Source Voltage (V DSS) | 70 V (max) | — |
| Drain Current (continuous) | [DATA_NEEDED: typical drain current at TC=25C] | — |
| Operating Frequency Range | 865 MHz to 960 MHz | [DATA_NEEDED: full datasheet frequency range] |
| Test Frequency | 880 MHz | — |
| Drain Supply Voltage (V DD) | 28 V (typical) | — |
| Output Power (Average) | 35 W (single-carrier N-CDMA, 880 MHz) | — |
| Output Power (PEP) | [DATA_NEEDED: PEP at specified conditions] | — |
| Power Gain (G ps / G p) | 21 dB (typical at 880 MHz) | — |
| Drain Efficiency | 32.4% (typical, N-CDMA, 880 MHz) | — |
| 封装 / 外壳 | NI-780H-2L (ceramic/metal air-cavity flange-mount) | NI-780H-2L (CASE 465-06, STYLE 1), ceramic, flanged |
| 安装类型 | Chassis / Flange mount (through-hole RF leads) | Chassis/Surface flange mount (screw-down) |
| 工作温度范围 | -40C to +150C (junction) | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| Thermal Resistance (R thJC) | [DATA_NEEDED: thermal resistance junction-to-case] | — |
| Input Match | Internally matched input (broadband) | — |
| RoHS 状态 | Compliant | unknown |
| Lead-Free | Yes | — |
| MSL 等级 | Not applicable (non-SMD air-cavity package) | — |
| Frequency Band | — | 880 MHz (single-band cellular UHF) |
| Drain-Source Voltage (VDSS) | — | [DATA_NEEDED: VDSS rating] |
| Supply Voltage (VDD) | — | 28 V (typical operation) |
| Average Output Power (Pout avg) | — | 35 W (N-CDMA, 880 MHz) |
| Peak Output Power (Pout peak) | — | [DATA_NEEDED: peak Pout rating] |
| Power Gain (Gp) | — | 20.9 dB (typical at 880 MHz) |
| Drain Efficiency (ηD) | — | [DATA_NEEDED: efficiency at rated Pout] |
| Quiescent Bias Current (IDQ) | — | 1.2 A (typical) |
| Configuration | — | Single (single-ended, common-source) |
| Operating Mode | — | Enhancement mode, Class AB |
| Test Signal | — | Single N-CDMA |
| Maximum Power Dissipation | — | 565 W (absolute, per Partstack parametric record) |
| Lead Finish | — | [DATA_NEEDED: lead finish] |