MT40A256M16GE-075E:B vs K4A8G165WB-BCPB Vergleich
Detaillierter Direktvergleich von MT40A256M16GE-075E:B von Micron Technology und K4A8G165WB-BCPB von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Micron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B ✓ Aktiv
Spezifikationsvergleich
| Parameter | MT40A256M16GE-075E:B | K4A8G165WB-BCPB |
|---|---|---|
| Marke | Micron Technology | Samsung Electronics |
| Kategorie | Memory ICs | Memory ICs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,95 | $2,30 |
| Speichertyp | DDR4 SDRAM | — |
| Speichergröße | 4 Gbit | — |
| Speicherorganisation | 256M x 16 | 512M x 16 |
| Memory Interface | Parallel | — |
| Clock Frequency | 1.33 GHz | — |
| Datenrate | 2666 MT/s (DDR4-2666) | — |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV/+250 mV | — |
| Internal Banks | 16 | — |
| Refresh | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C | Auto and Self Refresh |
| I/O Type | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable generation | — |
| Special Features | Temperature controlled refresh (TCR) | — |
| Gehäuse | 96-FBGA (9 x 14 mm) | 96-ball FBGA (TFBGA-96) |
| Montageart | Surface Mount | — |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range for standard grade] | 0°C to 85°C |
| Access Time | [DATA_NEEDED: CAS latency / access time] | — |
| Density | — | 8 Gb |
| Speed Grade | — | 2133 Mbps (PC4-17000) |
| Versorgungsspannung | — | 1.2 V (1.14 V to 1.26 V) |
| Burst Length | — | 8 (BL8) |
| Burst Type | — | Sequential and Interleave |
| CAS-Latenz | — | Programmable (e.g., 15, 16, 18) |
| Number of Terminals | — | 96 |
| Package Code | — | TFBGA |
| Package Shape | — | RECTANGULAR |
| Terminal Position | — | BOTTOM |
| RoHS-Status | — | Compliant |