MT40A256M16GE-075E:B vs K4A8G165WB-BCPB Comparison

Detailed side-by-side comparison of MT40A256M16GE-075E:B by Micron Technology and K4A8G165WB-BCPB by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
MT40A256M16GE-075E:B MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron

MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron

MT40A256M16GE-075E:B ✓ Active
Samsung Electronics
K4A8G165WB-BCPB K4A8G165WB-BCPB - 8Gb DDR4 SDRAM x16 2133Mbps | Samsung

K4A8G165WB-BCPB - 8Gb DDR4 SDRAM x16 2133Mbps | Samsung

K4A8G165WB-BCPB ✓ Active

Specification Comparison

Parameter MT40A256M16GE-075E:B K4A8G165WB-BCPB
Brand Micron Technology Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.95 $2.30
Memory Type DDR4 SDRAM —
Memory Size 4 Gbit —
Organization 256M x 16 512M x 16
Memory Interface Parallel —
Clock Frequency 1.33 GHz —
Data Rate 2666 MT/s (DDR4-2666) —
VDD / VDDQ 1.2 V +/-60 mV —
VPP 2.5 V, -125 mV/+250 mV —
Internal Banks 16 —
Refresh 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C Auto and Self Refresh
I/O Type 1.2 V pseudo open-drain —
VREFDQ On-die, internal, adjustable generation —
Special Features Temperature controlled refresh (TCR) —
Package 96-FBGA (9 x 14 mm) 96-ball FBGA (TFBGA-96)
Mounting Type Surface Mount —
Operating Temperature [DATA_NEEDED: operating temperature range for standard grade] 0°C to 85°C
Access Time [DATA_NEEDED: CAS latency / access time] —
Density — 8 Gb
Speed Grade — 2133 Mbps (PC4-17000)
Supply Voltage — 1.2 V (1.14 V to 1.26 V)
Burst Length — 8 (BL8)
Burst Type — Sequential and Interleave
CAS Latency — Programmable (e.g., 15, 16, 18)
Number of Terminals — 96
Package Code — TFBGA
Package Shape — RECTANGULAR
Terminal Position — BOTTOM
RoHS Status — Compliant

Datasheets & Resources

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